Abstract
We show reduced junction temperature and heat dissipation in AlGaN nanowires LEDs on a metal substrate compared to devices on a silicon substrate by employing the forward-voltage and peak-shift methods.
Original language | English (US) |
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Title of host publication | CLEO Pacific Rim Conference |
Publisher | The Optical Society |
ISBN (Print) | 9781943580453 |
DOIs | |
State | Published - Nov 20 2018 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the support from KACST, Grant No. KACST TIC R2-FP-008 and KAUST, BAS/1/1614-01-01.