Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

W. Hahn; J. M. Lentali; P. Polovodov; N. Young; S. Nakamura; J. S. Speck; C. Weisbuch; M. Filoche; Y. R. Wu; M. Piccardo; F. Maroun; L. Martinelli; Y. Lassailly; J. Peretti

doi:10.1103/PhysRevB.98.045305

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

W. Hahn, J. M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y. R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, J. Peretti

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Abstract

We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.

Original language	English (US)
Journal	Physical Review B
Volume	98
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.98.045305
State	Published - Jul 19 2018
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-09
Acknowledgements: We thank Aurélien David for fruitful discussions. This work was supported by the French National Research Agency (ANR) and Taiwanese Ministry of Science and Technology (MOST) (CRIPRONI project: Grants No. ANR-14-CE05-0048-01, No. MOST-104-2923-E-002-004-MY3, and No. MOST-105-2221-E-002-098-MY3), and by ARPA-E, U.S. Department of Energy (program DE-EE0007096), the UCSB Solid State Lighting and Energy Electronics Center, and KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1103/PhysRevB.98.045305

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Hahn, W., Lentali, J. M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y. R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., & Peretti, J. (2018). Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy. Physical Review B, 98(4). https://doi.org/10.1103/PhysRevB.98.045305

@article{65260690a84e4f5ea61334f2adfb244c,

title = "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy",

abstract = "We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.",

author = "W. Hahn and Lentali, {J. M.} and P. Polovodov and N. Young and S. Nakamura and Speck, {J. S.} and C. Weisbuch and M. Filoche and Wu, {Y. R.} and M. Piccardo and F. Maroun and L. Martinelli and Y. Lassailly and J. Peretti",

note = "KAUST Repository Item: Exported on 2022-06-09 Acknowledgements: We thank Aur{\'e}lien David for fruitful discussions. This work was supported by the French National Research Agency (ANR) and Taiwanese Ministry of Science and Technology (MOST) (CRIPRONI project: Grants No. ANR-14-CE05-0048-01, No. MOST-104-2923-E-002-004-MY3, and No. MOST-105-2221-E-002-098-MY3), and by ARPA-E, U.S. Department of Energy (program DE-EE0007096), the UCSB Solid State Lighting and Energy Electronics Center, and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2018",

month = jul,

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doi = "10.1103/PhysRevB.98.045305",

language = "English (US)",

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Hahn, W, Lentali, JM, Polovodov, P, Young, N, Nakamura, S, Speck, JS, Weisbuch, C, Filoche, M, Wu, YR, Piccardo, M, Maroun, F, Martinelli, L, Lassailly, Y & Peretti, J 2018, 'Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy', Physical Review B, vol. 98, no. 4. https://doi.org/10.1103/PhysRevB.98.045305

TY - JOUR

T1 - Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

AU - Hahn, W.

AU - Lentali, J. M.

AU - Polovodov, P.

AU - Young, N.

AU - Nakamura, S.

AU - Speck, J. S.

AU - Weisbuch, C.

AU - Filoche, M.

AU - Wu, Y. R.

AU - Piccardo, M.

AU - Maroun, F.

AU - Martinelli, L.

AU - Lassailly, Y.

AU - Peretti, J.

N1 - KAUST Repository Item: Exported on 2022-06-09 Acknowledgements: We thank Aurélien David for fruitful discussions. This work was supported by the French National Research Agency (ANR) and Taiwanese Ministry of Science and Technology (MOST) (CRIPRONI project: Grants No. ANR-14-CE05-0048-01, No. MOST-104-2923-E-002-004-MY3, and No. MOST-105-2221-E-002-098-MY3), and by ARPA-E, U.S. Department of Energy (program DE-EE0007096), the UCSB Solid State Lighting and Energy Electronics Center, and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2018/7/19

Y1 - 2018/7/19

N2 - We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.

AB - We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electroluminescence spectra of InGaN/GaN quantum well structures.

UR - http://hdl.handle.net/10754/678789

UR - https://link.aps.org/doi/10.1103/PhysRevB.98.045305

UR - http://www.scopus.com/inward/record.url?scp=85050495477&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.98.045305

DO - 10.1103/PhysRevB.98.045305

M3 - Article

SN - 2469-9969

VL - 98

JO - Physical Review B

JF - Physical Review B

IS - 4

ER -

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

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