Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

Mei Cui; Wei Guo; Houqiang Xu; Jie'an Jiang; Li Chen; Somak Mitra; Iman S. Roqan; Haibo Jiang; Xiaohang Li; Jichun Ye

doi:10.1002/pssr.202100035

Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

Mei Cui, Wei Guo, Houqiang Xu, Jie'an Jiang, Li Chen, Somak Mitra, Iman S. Roqan, Haibo Jiang, Xiaohang Li, Jichun Ye

Research output: Contribution to journal › Article › peer-review

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Abstract

AlGaN based multiple-quantum-wells (MQWs) incorporating opposite polarity domains was grown by MOCVD. A direct demonstration of carrier localization effect was provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite of the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer scale polarity domains in the MQWs is a promising perspective for the development of efficient UV emitters.

Original language	English (US)
Journal	physica status solidi (RRL) – Rapid Research Letters
DOIs	https://doi.org/10.1002/pssr.202100035
State	Published - Feb 25 2021

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KAUST Repository Item: Exported on 2021-03-01

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10.1002/pssr.202100035

https://repository.kaust.edu.sa/bitstream/10754/667711/1/pssr.202100035.pdf

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@article{2b6662bd64e645b89df435b9f27cb0f4,

title = "Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging",

abstract = "AlGaN based multiple-quantum-wells (MQWs) incorporating opposite polarity domains was grown by MOCVD. A direct demonstration of carrier localization effect was provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite of the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer scale polarity domains in the MQWs is a promising perspective for the development of efficient UV emitters.",

author = "Mei Cui and Wei Guo and Houqiang Xu and Jie'an Jiang and Li Chen and Somak Mitra and Roqan, {Iman S.} and Haibo Jiang and Xiaohang Li and Jichun Ye",

note = "KAUST Repository Item: Exported on 2021-03-01",

year = "2021",

month = feb,

day = "25",

doi = "10.1002/pssr.202100035",

language = "English (US)",

journal = "physica status solidi (RRL) – Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley",

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TY - JOUR

T1 - Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

AU - Cui, Mei

AU - Guo, Wei

AU - Xu, Houqiang

AU - Jiang, Jie'an

AU - Chen, Li

AU - Mitra, Somak

AU - Roqan, Iman S.

AU - Jiang, Haibo

AU - Li, Xiaohang

AU - Ye, Jichun

N1 - KAUST Repository Item: Exported on 2021-03-01

PY - 2021/2/25

Y1 - 2021/2/25

N2 - AlGaN based multiple-quantum-wells (MQWs) incorporating opposite polarity domains was grown by MOCVD. A direct demonstration of carrier localization effect was provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite of the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer scale polarity domains in the MQWs is a promising perspective for the development of efficient UV emitters.

AB - AlGaN based multiple-quantum-wells (MQWs) incorporating opposite polarity domains was grown by MOCVD. A direct demonstration of carrier localization effect was provided by a combination analysis of space-resolved luminescence peak position and Ga/Al composition distribution. Furthermore, through Raman spectroscopy, it is found that compressive strain plays a key role in improving the optical properties of UV-MQWs despite of the inferior crystalline quality in the N-polar domains. This suggests that incorporating sub-micrometer scale polarity domains in the MQWs is a promising perspective for the development of efficient UV emitters.

UR - http://hdl.handle.net/10754/667711

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssr.202100035

U2 - 10.1002/pssr.202100035

DO - 10.1002/pssr.202100035

M3 - Article

SN - 1862-6254

JO - physica status solidi (RRL) – Rapid Research Letters

JF - physica status solidi (RRL) – Rapid Research Letters

ER -

Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging

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