Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Suey Li Toh; K. Li; C. H. Ang; R. Rao; E. Er; K. P. Loh; C. B. Boothroyd; L. Chan

Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Suey Li Toh^*, K. Li, C. H. Ang, R. Rao, E. Er, K. P. Loh, C. B. Boothroyd, L. Chan

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.

Original language	English (US)
Pages	302-305
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore Duration: Jun 27 2005 → Jul 1 2005

Other

Other	12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
Country/Territory	Singapore
City	Singapore
Period	06/27/05 → 07/1/05

ASJC Scopus subject areas

General Engineering

Cite this

Toh, S. L., Li, K., Ang, C. H., Rao, R., Er, E., Loh, K. P., Boothroyd, C. B., & Chan, L. (2005). Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction. 302-305. Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore.

@conference{dbe53cb00a7941d3b0d5349b0dcb6bef,

title = "Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction",

abstract = "We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.",

author = "Toh, {Suey Li} and K. Li and Ang, {C. H.} and R. Rao and E. Er and Loh, {K. P.} and Boothroyd, {C. B.} and L. Chan",

year = "2005",

language = "English (US)",

pages = "302--305",

note = "12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 ; Conference date: 27-06-2005 Through 01-07-2005",

}

Toh, SL, Li, K, Ang, CH, Rao, R, Er, E, Loh, KP, Boothroyd, CB & Chan, L 2005, 'Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction', Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore, 06/27/05 - 07/1/05 pp. 302-305.

Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction. / Toh, Suey Li; Li, K.; Ang, C. H. et al.
2005. 302-305 Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

AU - Toh, Suey Li

AU - Li, K.

AU - Ang, C. H.

AU - Rao, R.

AU - Er, E.

AU - Loh, K. P.

AU - Boothroyd, C. B.

AU - Chan, L.

PY - 2005

Y1 - 2005

N2 - We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.

AB - We have used both convergent beam electron diffraction (CBED) and high-resolution X-ray diffractometry (HRXRD) to investigate the influence of different graded layer thicknesses on the overall and interfacial strain phenomena in the SiGe/Si heterostructures. Broadening of the higher order Laue zone (HOLZ) reflections is often observed at the interface, and contains information relating to the lattice behaviour. These results, when considered and correlated with the plots from HRXRD, allow us to predict the optimized relaxation mechanisms taking place at the interfacial regions.

UR - http://www.scopus.com/inward/record.url?scp=28044461695&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:28044461695

SP - 302

EP - 305

T2 - 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005

Y2 - 27 June 2005 through 1 July 2005

ER -

Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Abstract

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ASJC Scopus subject areas

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