Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography

V. Bellas; E. Tegou; I. Raptis; E. Gogolides; P. Argitis; H. Iatrou; N. Hadjichristidis; E. Sarantopoulou; A. C. Cefalas

doi:10.1116/1.1526358

Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography

V. Bellas^*, E. Tegou, I. Raptis, E. Gogolides, P. Argitis, H. Iatrou, N. Hadjichristidis, E. Sarantopoulou, A. C. Cefalas

^*Corresponding author for this work

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27 Scopus citations

Abstract

The synthesis of different siloxane and cage-type silsesquioxane copolymers was examined. Requirements for positive aqueous base development were studied. Results demonstrate the possibility of using polyhedral oligomeric silsesquioxane based materials as 157 nm resists, at least in the bilayer mode.

Original language	English (US)
Pages (from-to)	2902-2908
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1526358
State	Published - Nov 2002
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The synthesis of different siloxane and cage-type silsesquioxane copolymers was examined. Requirements for positive aqueous base development were studied. Results demonstrate the possibility of using polyhedral oligomeric silsesquioxane based materials as 157 nm resists, at least in the bilayer mode.",

author = "V. Bellas and E. Tegou and I. Raptis and E. Gogolides and P. Argitis and H. Iatrou and N. Hadjichristidis and E. Sarantopoulou and Cefalas, {A. C.}",

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AU - Bellas, V.

AU - Tegou, E.

AU - Raptis, I.

AU - Gogolides, E.

AU - Argitis, P.

AU - Iatrou, H.

AU - Hadjichristidis, N.

AU - Sarantopoulou, E.

AU - Cefalas, A. C.

PY - 2002/11

Y1 - 2002/11

N2 - The synthesis of different siloxane and cage-type silsesquioxane copolymers was examined. Requirements for positive aqueous base development were studied. Results demonstrate the possibility of using polyhedral oligomeric silsesquioxane based materials as 157 nm resists, at least in the bilayer mode.

AB - The synthesis of different siloxane and cage-type silsesquioxane copolymers was examined. Requirements for positive aqueous base development were studied. Results demonstrate the possibility of using polyhedral oligomeric silsesquioxane based materials as 157 nm resists, at least in the bilayer mode.

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U2 - 10.1116/1.1526358

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M3 - Article

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SN - 0734-211X

VL - 20

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EP - 2908

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography

Abstract

ASJC Scopus subject areas

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