Evaluation of new materials for plasmonic imaging lithography at 476 nm using near field scanning optical microscopy

Scott A. Backer*, Itai Suez, Zachary M. Fresco, Jean M.J. Fŕchet, Josh A. Conway, Shantha Vedantam, Hyojune Lee, Eli Yablonovitch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A new resist formulation was successfully patterned using near field optical microscopy in order to simulate the conditions prevailing in silver based plasmonic imaging tools. Radiation at 476 nm was transmitted through a near field scanning optical microscopy fiber probe tip to cross-link a film of poly(4-methacrylmethyl styrene) via polymerization of pendant methacryloyl groups using camphorquinone and dimethyl aniline as an initiating system. Patterns were generated by scanning at several speeds in order to moderate the dose while maintaining a constant probe height of about 5 nm above the sample through shear force feedback. After development, lines corresponding to the exposed regions were observed. At a scanning speed of 4 μms, the observed pattern has a full width at half maximum of 275 nm and a height of ∼25 nm.

Original languageEnglish (US)
Pages (from-to)1336-1339
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
StatePublished - 2007
Externally publishedYes

Bibliographical note

Funding Information:
The authors thank the Center for Scaleable Integrated Nanomanufacturing (SINAM) funded by a grant of the National Science Foundation and SRC∕DARPA for the support of this research.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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