Evaluation of cyclic gallium amides as precursors for gallium nitride thin films

Jayaprakash Khanderi; Manuela Winter; Harish Parala; Hans Werner Becker; Roland A. Fischer

Evaluation of cyclic gallium amides as precursors for gallium nitride thin films

Jayaprakash Khanderi^*, Manuela Winter, Harish Parala, Hans Werner Becker, Roland A. Fischer

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Cyclic gallium amides of the type 1-methyl-2,5-dialkyl-2,5-diaza-1- gallapentanes (MeGa[NR(CH₂)₂NR])₂ R = Me [1] and Et [2], were used as single source precursors to deposit GaN thin films. 1 and 2 were synthesized in good yield by salt metathesis reaction using MeGaCl₂ and dilithium amides such as LiNR(CH₂) ₂RNLi [where R = Me or Et] and characterized by routine analytical tools. Single crystal X-ray structures of 1 and 2 showed a association into dimers in the solid state with the formation of a Ga₂N₂ donor-acceptor bonded structural motif. 1 decomposed immediately after melting (m.p. 149°C), however 2 can be sublimed at 90°C (m.p. 100°C) without decomposition and hence was suitable for MOCVD studies. Compound 2 was tested for single source characteristics using N₂ and H₂ as carrier gas. 2 starts to decompose above 375°C to metallic gallium droplets as indicated by SEM. Polycrystalline GaN films were obtained only when using N₂ and H₂ as carrier gas and NH₃ as additional reactive gas. GaN deposited using H₂ as carrier gas showed improved quality than in case of N₂ only.

Original language	English (US)
Pages	744-753
Number of pages	10
State	Published - 2005
Externally published	Yes
Event	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany Duration: Sep 5 2005 → Sep 9 2005

Other

Other	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
Country/Territory	Germany
City	Bochum
Period	09/5/05 → 09/9/05

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Evaluation of cyclic gallium amides as precursors for gallium nitride thin films",

abstract = "Cyclic gallium amides of the type 1-methyl-2,5-dialkyl-2,5-diaza-1- gallapentanes (MeGa[NR(CH2)2NR])2 R = Me [1] and Et [2], were used as single source precursors to deposit GaN thin films. 1 and 2 were synthesized in good yield by salt metathesis reaction using MeGaCl2 and dilithium amides such as LiNR(CH2) 2RNLi [where R = Me or Et] and characterized by routine analytical tools. Single crystal X-ray structures of 1 and 2 showed a association into dimers in the solid state with the formation of a Ga2N2 donor-acceptor bonded structural motif. 1 decomposed immediately after melting (m.p. 149°C), however 2 can be sublimed at 90°C (m.p. 100°C) without decomposition and hence was suitable for MOCVD studies. Compound 2 was tested for single source characteristics using N2 and H2 as carrier gas. 2 starts to decompose above 375°C to metallic gallium droplets as indicated by SEM. Polycrystalline GaN films were obtained only when using N2 and H2 as carrier gas and NH3 as additional reactive gas. GaN deposited using H2 as carrier gas showed improved quality than in case of N2 only.",

author = "Jayaprakash Khanderi and Manuela Winter and Harish Parala and Becker, {Hans Werner} and Fischer, {Roland A.}",

year = "2005",

language = "English (US)",

pages = "744--753",

note = "15th European Conference on Chemical Vapor Deposition, EUROCVD-15 ; Conference date: 05-09-2005 Through 09-09-2005",

}

TY - CONF

T1 - Evaluation of cyclic gallium amides as precursors for gallium nitride thin films

AU - Khanderi, Jayaprakash

AU - Winter, Manuela

AU - Parala, Harish

AU - Becker, Hans Werner

AU - Fischer, Roland A.

PY - 2005

Y1 - 2005

N2 - Cyclic gallium amides of the type 1-methyl-2,5-dialkyl-2,5-diaza-1- gallapentanes (MeGa[NR(CH2)2NR])2 R = Me [1] and Et [2], were used as single source precursors to deposit GaN thin films. 1 and 2 were synthesized in good yield by salt metathesis reaction using MeGaCl2 and dilithium amides such as LiNR(CH2) 2RNLi [where R = Me or Et] and characterized by routine analytical tools. Single crystal X-ray structures of 1 and 2 showed a association into dimers in the solid state with the formation of a Ga2N2 donor-acceptor bonded structural motif. 1 decomposed immediately after melting (m.p. 149°C), however 2 can be sublimed at 90°C (m.p. 100°C) without decomposition and hence was suitable for MOCVD studies. Compound 2 was tested for single source characteristics using N2 and H2 as carrier gas. 2 starts to decompose above 375°C to metallic gallium droplets as indicated by SEM. Polycrystalline GaN films were obtained only when using N2 and H2 as carrier gas and NH3 as additional reactive gas. GaN deposited using H2 as carrier gas showed improved quality than in case of N2 only.

AB - Cyclic gallium amides of the type 1-methyl-2,5-dialkyl-2,5-diaza-1- gallapentanes (MeGa[NR(CH2)2NR])2 R = Me [1] and Et [2], were used as single source precursors to deposit GaN thin films. 1 and 2 were synthesized in good yield by salt metathesis reaction using MeGaCl2 and dilithium amides such as LiNR(CH2) 2RNLi [where R = Me or Et] and characterized by routine analytical tools. Single crystal X-ray structures of 1 and 2 showed a association into dimers in the solid state with the formation of a Ga2N2 donor-acceptor bonded structural motif. 1 decomposed immediately after melting (m.p. 149°C), however 2 can be sublimed at 90°C (m.p. 100°C) without decomposition and hence was suitable for MOCVD studies. Compound 2 was tested for single source characteristics using N2 and H2 as carrier gas. 2 starts to decompose above 375°C to metallic gallium droplets as indicated by SEM. Polycrystalline GaN films were obtained only when using N2 and H2 as carrier gas and NH3 as additional reactive gas. GaN deposited using H2 as carrier gas showed improved quality than in case of N2 only.

UR - http://www.scopus.com/inward/record.url?scp=31744450059&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31744450059

SP - 744

EP - 753

T2 - 15th European Conference on Chemical Vapor Deposition, EUROCVD-15

Y2 - 5 September 2005 through 9 September 2005

ER -

Evaluation of cyclic gallium amides as precursors for gallium nitride thin films

Abstract

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