Europium doping of zincblende GaN by ion implantation

K. Lorenz*, I. S. Roqan, N. Franco, K. P. O'Donnell, V. Darakchieva, E. Alves, C. Trager-Cowan, R. W. Martin, D. J. As, M. Panfilova

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c -lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the 〈 110 〉 direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.

Original languageEnglish (US)
Article number113507
JournalJournal of Applied Physics
Issue number11
StatePublished - 2009

Bibliographical note

Funding Information:
We acknowledge funding by the Fundação para a Ciência e Tecnologia (FCT), Portugal (Grant Nos. POCI/FIS/57550/2004 and PTDC/FIS/66262/2006 and “Ciência 2007”). D.J.A. wants to thank Dr. Abe and Dr. H. Nagasawa of HOYA Corporation for the free-standing substrates and the German Science Foundation (DFG) for financial support.

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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