Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)

Yen Hung Lin; Hendrik Faber; Kui Zhao; Qingxiao Wang; Aram Amassian; Martyn McLachlan; Thomas D. Anthopoulos

doi:10.1002/adma.201303701

Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)

Yen Hung Lin, Hendrik Faber, Kui Zhao, Qingxiao Wang, Aram Amassian, Martyn McLachlan, Thomas D. Anthopoulos

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	4689
Number of pages	1
Journal	Advanced Materials
Volume	25
Issue number	34
DOIs	https://doi.org/10.1002/adma.201303701
State	Published - Sep 14 2013

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201303701

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Lin, Y. H., Faber, H., Zhao, K., Wang, Q., Amassian, A., McLachlan, M., & Anthopoulos, T. D. (2013). Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622). Advanced Materials, 25(34), 4689. https://doi.org/10.1002/adma.201303701

@article{de8eb2acea344f4a932fd822e0a92e72,

title = "Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)",

author = "Lin, {Yen Hung} and Hendrik Faber and Kui Zhao and Qingxiao Wang and Aram Amassian and Martyn McLachlan and Anthopoulos, {Thomas D.}",

year = "2013",

month = sep,

day = "14",

doi = "10.1002/adma.201303701",

language = "English (US)",

volume = "25",

pages = "4689",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "WILEY-V C H VERLAG GMBH",

number = "34",

}

Lin, YH, Faber, H, Zhao, K, Wang, Q, Amassian, A, McLachlan, M & Anthopoulos, TD 2013, 'Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)', Advanced Materials, vol. 25, no. 34, pp. 4689. https://doi.org/10.1002/adma.201303701

Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622). / Lin, Yen Hung; Faber, Hendrik; Zhao, Kui et al.
In: Advanced Materials, Vol. 25, No. 34, 14.09.2013, p. 4689.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)

AU - Lin, Yen Hung

AU - Faber, Hendrik

AU - Zhao, Kui

AU - Wang, Qingxiao

AU - Amassian, Aram

AU - McLachlan, Martyn

AU - Anthopoulos, Thomas D.

PY - 2013/9/14

Y1 - 2013/9/14

UR - http://www.scopus.com/inward/record.url?scp=84883783726&partnerID=8YFLogxK

U2 - 10.1002/adma.201303701

DO - 10.1002/adma.201303701

M3 - Comment/debate

AN - SCOPUS:84883783726

SN - 0935-9648

VL - 25

SP - 4689

JO - Advanced Materials

JF - Advanced Materials

IS - 34

ER -

Erratum: High-performance ZnO transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c (Advanced Materials (2013) 25 (4340-4346) DOI: 10.1002/adma.201301622)

ASJC Scopus subject areas

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