Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

Pradipta K. Nayak; M. N. Hedhili; Dongkyu Cha; H. N. Alshareef

doi:10.1063/1.4902402

Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

Pradipta K. Nayak^*, M. N. Hedhili, Dongkyu Cha, H. N. Alshareef

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	249902
Journal	Applied Physics Letters
Volume	105
Issue number	24
DOIs	https://doi.org/10.1063/1.4902402
State	Published - Dec 15 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4902402

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@article{c0003dbaf79e43cbac6be80bf7596836,

title = "Erratum: {"}High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment{"} [Appl. Phys. Lett. 100, 202106 (2012)]",

author = "Nayak, {Pradipta K.} and Hedhili, {M. N.} and Dongkyu Cha and Alshareef, {H. N.}",

year = "2014",

month = dec,

day = "15",

doi = "10.1063/1.4902402",

language = "English (US)",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "24",

}

Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]. / Nayak, Pradipta K.; Hedhili, M. N.; Cha, Dongkyu et al.
In: Applied Physics Letters, Vol. 105, No. 24, 249902, 15.12.2014.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

AU - Nayak, Pradipta K.

AU - Hedhili, M. N.

AU - Cha, Dongkyu

AU - Alshareef, H. N.

PY - 2014/12/15

Y1 - 2014/12/15

UR - http://www.scopus.com/inward/record.url?scp=84919663297&partnerID=8YFLogxK

U2 - 10.1063/1.4902402

DO - 10.1063/1.4902402

M3 - Comment/debate

AN - SCOPUS:84919663297

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 249902

ER -

Erratum: "High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment" [Appl. Phys. Lett. 100, 202106 (2012)]

ASJC Scopus subject areas

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