@article{320adc2f9c1a44639a7fc5366920259c,
title = "Erratum: Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress (Applied Physics Letters (2011) 99 (103510))",
author = "V. Iglesias and M. Lanza and K. Zhang and A. Bayerl and M. Porti and M. Nafra and X. Aymerich and G. Benstetter and Shen, {Z. Y.} and G. Bersuker",
note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",
year = "2011",
month = dec,
day = "5",
doi = "10.1063/1.3666227",
language = "English (US)",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "23",
}