Erratum: Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) (AIP Advances(2020)(2020) 10 (065318) DOI: 10.1063/5.0012362)

Jian Wei Liang; Kuang Hui Li; Chun Hong Kang; Laurentiu Braic; Adrian Emil Kiss; Nicolae Catalin Zoita; Tien Khee Ng; Boon S. Ooi

doi:10.1063/5.0031434

Erratum: Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) (AIP Advances(2020)(2020) 10 (065318) DOI: 10.1063/5.0012362)

Jian Wei Liang, Kuang Hui Li, Chun Hong Kang, Laurentiu Braic, Adrian Emil Kiss, Nicolae Catalin Zoita, Tien Khee Ng^*, Boon S. Ooi^*

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

The calculated lattice constants of NiO, TiN, and Si of the NiO/TiN/Si sample1 are corrected as follows: 4.209 A for NiO, 4.237 A for TiN, and 5.456 A for Si. The lattice mismatches therefore are 0.66% for the NiO/TiN interface and 22.34% for the TiN/Si interface. The second to last paragraph before the Conclusions section (pp. 10–11) should read as follows: By the same calculation, the parallel lattice strain of NiO on TiN/Si is 0.0066, and that of TiN on Si is 0.2234. For NiO on TiN/Si (Formula Presented).

Original language	English (US)
Article number	31434
Journal	AIP ADVANCES
Volume	10
Issue number	11
DOIs	https://doi.org/10.1063/5.0031434
State	Published - Nov 1 2020

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© 2020 American Institute of Physics Inc.. All rights reserved.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/5.0031434

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@article{855a2a6506a1427ea8e58c095fdece1e,

title = "Erratum: Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) (AIP Advances(2020)(2020) 10 (065318) DOI: 10.1063/5.0012362)",

abstract = "The calculated lattice constants of NiO, TiN, and Si of the NiO/TiN/Si sample1 are corrected as follows: 4.209 A for NiO, 4.237 A for TiN, and 5.456 A for Si. The lattice mismatches therefore are 0.66% for the NiO/TiN interface and 22.34% for the TiN/Si interface. The second to last paragraph before the Conclusions section (pp. 10–11) should read as follows: By the same calculation, the parallel lattice strain of NiO on TiN/Si is 0.0066, and that of TiN on Si is 0.2234. For NiO on TiN/Si (Formula Presented).",

author = "Liang, {Jian Wei} and Li, {Kuang Hui} and Kang, {Chun Hong} and Laurentiu Braic and Kiss, {Adrian Emil} and Zoita, {Nicolae Catalin} and Ng, {Tien Khee} and Ooi, {Boon S.}",

year = "2020",

month = nov,

day = "1",

doi = "10.1063/5.0031434",

language = "English (US)",

volume = "10",

journal = "AIP ADVANCES",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "11",

}

Erratum: Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) (AIP Advances(2020)(2020) 10 (065318) DOI: 10.1063/5.0012362). / Liang, Jian Wei; Li, Kuang Hui; Kang, Chun Hong et al.
In: AIP ADVANCES, Vol. 10, No. 11, 31434, 01.11.2020.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) (AIP Advances(2020)(2020) 10 (065318) DOI: 10.1063/5.0012362)

AU - Liang, Jian Wei

AU - Li, Kuang Hui

AU - Kang, Chun Hong

AU - Braic, Laurentiu

AU - Kiss, Adrian Emil

AU - Zoita, Nicolae Catalin

AU - Ng, Tien Khee

AU - Ooi, Boon S.

PY - 2020/11/1

Y1 - 2020/11/1

N2 - The calculated lattice constants of NiO, TiN, and Si of the NiO/TiN/Si sample1 are corrected as follows: 4.209 A for NiO, 4.237 A for TiN, and 5.456 A for Si. The lattice mismatches therefore are 0.66% for the NiO/TiN interface and 22.34% for the TiN/Si interface. The second to last paragraph before the Conclusions section (pp. 10–11) should read as follows: By the same calculation, the parallel lattice strain of NiO on TiN/Si is 0.0066, and that of TiN on Si is 0.2234. For NiO on TiN/Si (Formula Presented).

AB - The calculated lattice constants of NiO, TiN, and Si of the NiO/TiN/Si sample1 are corrected as follows: 4.209 A for NiO, 4.237 A for TiN, and 5.456 A for Si. The lattice mismatches therefore are 0.66% for the NiO/TiN interface and 22.34% for the TiN/Si interface. The second to last paragraph before the Conclusions section (pp. 10–11) should read as follows: By the same calculation, the parallel lattice strain of NiO on TiN/Si is 0.0066, and that of TiN on Si is 0.2234. For NiO on TiN/Si (Formula Presented).

UR - http://www.scopus.com/inward/record.url?scp=85095995521&partnerID=8YFLogxK

U2 - 10.1063/5.0031434

DO - 10.1063/5.0031434

M3 - Comment/debate

AN - SCOPUS:85095995521

SN - 2158-3226

VL - 10

JO - AIP ADVANCES

JF - AIP ADVANCES

IS - 11

M1 - 31434

ER -

Erratum: Characterization of epitaxial titanium nitride mediated single-crystal nickel oxide grown on MgO-(100) and Si-(100) (AIP Advances(2020)(2020) 10 (065318) DOI: 10.1063/5.0012362)

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