Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing

Yufang Xie, Ye Yuan, Mao Wang, Chi Xu, René Hübner, Jörg Grenzer, Yu Jia Zeng, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal

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16 Scopus citations


MnGe thin films have been demonstrated as promising spin-injector materials for germanium-based spintronic devices. So far, MnGe has been grown epitaxially only on Ge (111) substrates. In this letter, we present the growth of epitaxial MnGe films on Ge (100) substrates. The MnGe film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline MnGe is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal MnGe and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.
Original languageEnglish (US)
Pages (from-to)222401
JournalApplied Physics Letters
Issue number22
StatePublished - Nov 26 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was financially supported by the Helmholtz Association of German Research Centers (No. HGF-VH-NG-713). The author Y. Xie (File No. 201706340054) acknowledges the financial support by China Scholarship Council. Support by A. Scholz, R. Aniol and B. Scheumann is gratefully acknowledged. Furthermore, the use of HZDR Ion Beam Center TEM facilities and the funding of TEM Talos by the German Federal Ministry of Education of Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP are acknowledged.


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