β-Ga2O3 is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga2O3 thin films could only be realized on six-fold symmetric single crystal substrates including sapphire (0001), 3C-SiC (001), and native β-Ga2O3. In this report, we demonstrate the epitaxial growth of β-Ga2O3 (−201) thin films on non-six-fold symmetric substrates, i.e., the CeO2 (001) substrate. Different from the conventional six-fold symmetric sapphire substrates, the four-fold symmetric cubic phase CeO2 (001) induces the formation of two sets of hexagonal-like atom frameworks with a mutual rotation angle of 90° in the β-Ga2O3 (−201) plane. This is due to the small lattice mismatch between the β-Ga2O3 (−201) plane and the CeO2 (001) plane in two directions: CeO2 //β-Ga2O3  and CeO2 //β-Ga2O3 . Besides, the valence band offset (VBO) and the conduction band offset (CBO) at the β-Ga2O3/CeO2 heterojunction are examined using high-resolution X-ray photoelectron spectroscopy (HR-XPS) and are estimated to be 1.63 eV and 0.18 eV, respectively, suggesting a type-II heterostructure. The obtained epitaxial β-Ga2O3 thin films are fabricated into photodetectors (PDs), which show key photoelectrical characteristics that are similar to those of PDs using the conventional sapphire substrate. The results indicate the epitaxial β-Ga2O3 thin films on CeO2 have a high crystallization quality, and thus are capable of producing various essential devices. Moreover, the epitaxy between β-Ga2O3 (−201) and CeO2 (001) demonstrated in this work can pave the way for constructing heterostructures between β-Ga2O3 and other cubic-phase functional materials, such as p-type semiconductors, piezoelectric semiconductors, and superconductors.
Bibliographical noteKAUST Repository Item: Exported on 2021-10-18
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The authors would like to thank the support of KAUST Baseline Funds BAS/1/1664-01-01, Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01.
ASJC Scopus subject areas
- Materials Chemistry