Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

Nasir Alfaraj; Kuang Hui Li; Chun Hong Kang; Laurentiu Braic; Tien Khee Ng; Boon S. Ooi

doi:10.1117/12.2544427

Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

Nasir Alfaraj, Kuang Hui Li, Chun Hong Kang, Laurentiu Braic, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.

Original language	English (US)
Title of host publication	Oxide-based Materials and Devices XI
Publisher	SPIE
ISBN (Print)	9781510633254
DOIs	https://doi.org/10.1117/12.2544427
State	Published - Mar 6 2020

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@inproceedings{430a6d8d086c4243bab5b31ad9cfb7cb,

title = "Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics",

abstract = "Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.",

author = "Nasir Alfaraj and Li, {Kuang Hui} and Kang, {Chun Hong} and Laurentiu Braic and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2020",

month = mar,

day = "6",

doi = "10.1117/12.2544427",

language = "English (US)",

isbn = "9781510633254",

booktitle = "Oxide-based Materials and Devices XI",

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T1 - Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

AU - Alfaraj, Nasir

AU - Li, Kuang Hui

AU - Kang, Chun Hong

AU - Braic, Laurentiu

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2020/3/6

Y1 - 2020/3/6

N2 - Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.

AB - Thin polymorphic gallium oxide films were grown on c-plane sapphire using pulsed laser deposition. The stacked thin films (ϵ-Ga2O3 and β-Ga2O3) were sequentially grown under the same conditions but in a different ambience. Our X-ray diffraction measurements and transmission electron microscopy images confirmed a β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructure with rocking-curve widths of 1.4° (β-Ga2O3 (603)) and 0.6° (ϵ-Ga2O3 (006)). The crystallographic orientation relationships between c-plane sapphire and the heterogeneously nucleated ϵ-Ga2O3 buffer layer, as well as between the ϵ-Ga2O3 and β-Ga2O3 heterogeneous layers, were determined. Our study will aid in developing novel deep-ultraviolet optoelectronic devices, such as solar-blind and metal-insulator-semiconductor deep-ultraviolet photodiodes.

UR - http://hdl.handle.net/10754/662724

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11281/2544427/Epitaxial-growth-of-beta-Ga2O3-epsilon-Ga2O3-polymorphic-heterostructures-on/10.1117/12.2544427.full

UR - http://www.scopus.com/inward/record.url?scp=85083760684&partnerID=8YFLogxK

U2 - 10.1117/12.2544427

DO - 10.1117/12.2544427

M3 - Conference contribution

SN - 9781510633254

BT - Oxide-based Materials and Devices XI

PB - SPIE

ER -

Epitaxial growth of β-Ga2O3/ϵ-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics

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