Environmental stability of high-mobility indium-oxide based transparent electrodes

Thanaporn Tohsophon; Ali Dabirian; Stefaan De Wolf; Monica Morales-Masis; Christophe Ballif

doi:10.1063/1.4935125

Environmental stability of high-mobility indium-oxide based transparent electrodes

Thanaporn Tohsophon, Ali Dabirian, Stefaan De Wolf, Monica Morales-Masis^*, Christophe Ballif

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In₂O₃ (ITO), H-doped In₂O₃ (IO:H), and Zn-doped In₂O₃ (IZO) electrodes under damp heat (DH) conditions (85°C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (R_s) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% R_s degradation, due to losses in electron Hall mobility (μ_Hall). We propose that this degradation results from chemisorbed OH- or H₂O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μ_Hall strongly degrades during DH, the optical mobility (μ_optical) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

Original language	English (US)
Article number	116105
Journal	APL MATERIALS
Volume	3
Issue number	11
DOIs	https://doi.org/10.1063/1.4935125
State	Published - Nov 1 2015
Externally published	Yes

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Publisher Copyright:
© 2015 Author(s).

ASJC Scopus subject areas

General Materials Science
General Engineering

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title = "Environmental stability of high-mobility indium-oxide based transparent electrodes",

abstract = "Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO), H-doped In2O3 (IO:H), and Zn-doped In2O3 (IZO) electrodes under damp heat (DH) conditions (85°C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall). We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.",

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AU - Tohsophon, Thanaporn

AU - Dabirian, Ali

AU - De Wolf, Stefaan

AU - Morales-Masis, Monica

AU - Ballif, Christophe

PY - 2015/11/1

Y1 - 2015/11/1

N2 - Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO), H-doped In2O3 (IO:H), and Zn-doped In2O3 (IZO) electrodes under damp heat (DH) conditions (85°C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall). We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

AB - Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In2O3 (ITO), H-doped In2O3 (IO:H), and Zn-doped In2O3 (IZO) electrodes under damp heat (DH) conditions (85°C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (Rs) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% Rs degradation, due to losses in electron Hall mobility (μHall). We propose that this degradation results from chemisorbed OH- or H2O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μHall strongly degrades during DH, the optical mobility (μoptical) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

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Environmental stability of high-mobility indium-oxide based transparent electrodes

Abstract

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