TY - JOUR
T1 - Enhancing the Light-Extraction Efficiency of AlGaN Nanowires Ultraviolet Light-Emitting Diode by using Nitride/Air Distributed Bragg Reflector Nanogratings
AU - Alias, Mohd Sharizal
AU - Janjua, Bilal
AU - Zhao, Chao
AU - Priante, Davide
AU - Alhamoud, Abdullah
AU - Tangi, Malleswararao
AU - Alanazi, Lafi M.
AU - Alatawi, Abdullah
AU - Albadri, Abdulrahman M.
AU - Alyamani, Ahmed Y.
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This publication is based upon work supported by the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and the King Abdullah University of Science and Technology (KAUST) baseline funding BAS/1/1614-01-01.
PY - 2017/9/11
Y1 - 2017/9/11
N2 - The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.
AB - The performance and efficiency of AlGaN ultraviolet light-emitting diodes have been limited by the extremely low light-extraction efficiency (LEE) due to the intrinsic material properties of AlGaN. Here, to enhance the LEE of the device, we demonstrate an AlGaN nanowires light-emitting diode (NWs-LED) integrated with nitride/air Distributed Bragg Reflector (DBR) nanogratings. Compared to a control device (only mesa), the AlGaN NWs-LED with the nitride/air DBR nanogratings exhibit enhancement in the light output power and external quantum efficiency (EQE) by a factor of ∼1.67. The higher light output power and EQE are attributed mainly to the multiple reflectances laterally for the transverse magnetic (TM)-polarized light and scattering introduced by the nanogratings. To further understand the LEE enhancement, the electrical field distribution, extraction ratio and polar pattern of the AlGaN NWs-LED with and without the nitride/air DBR nanogratings were analyzed using the finite-difference-time-domain method. It was observed that the TM-field emission was confined and scattered upward whereas the polar pattern was intensified for the AlGaN NWs-LED with the nanogratings. Our approach to enhance the LEE via the nitride/air DBR nanogratings can provide a promising route for increasing the efficiency of AlGaN-based LEDs, also, to functioning as facet mirror for AlGaN-based laser diodes.
UR - http://hdl.handle.net/10754/625477
UR - http://ieeexplore.ieee.org/document/8031397/
UR - http://www.scopus.com/inward/record.url?scp=85030243518&partnerID=8YFLogxK
U2 - 10.1109/jphot.2017.2749198
DO - 10.1109/jphot.2017.2749198
M3 - Article
SN - 1943-0655
VL - 9
SP - 1
EP - 8
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 5
ER -