Enhancement of the far-field output power and the properties of the very-small-aperture lasers

Q. Gan, G. Song, Y. Xu, G. Yang, Y. Li, Q. Cao, W. Ma, J. Gao, L. Chen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.
Original languageEnglish (US)
Pages (from-to)503-506
Number of pages4
JournalApplied Physics B: Lasers and Optics
Volume81
Issue number4
DOIs
StatePublished - Aug 1 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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