Enhancement of the far-field output power and the properties of the very-small-aperture lasers

Q. Gan; G. Song; Y. Xu; G. Yang; Y. Li; Q. Cao; W. Ma; J. Gao; L. Chen

doi:10.1007/s00340-005-1908-0

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

Q. Gan, G. Song, Y. Xu, G. Yang, Y. Li, Q. Cao, W. Ma, J. Gao, L. Chen

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.

Original language	English (US)
Pages (from-to)	503-506
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	81
Issue number	4
DOIs	https://doi.org/10.1007/s00340-005-1908-0
State	Published - Aug 1 2005
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-13

ASJC Scopus subject areas

General Physics and Astronomy
Physics and Astronomy (miscellaneous)

Access to Document

10.1007/s00340-005-1908-0

Cite this

@article{a6bb6627001549d4b8ecdcc5c4bd5d88,

title = "Enhancement of the far-field output power and the properties of the very-small-aperture lasers",

abstract = "We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. {\textcopyright} Springer-Verlag 2005.",

author = "Q. Gan and G. Song and Y. Xu and G. Yang and Y. Li and Q. Cao and W. Ma and J. Gao and L. Chen",

note = "Generated from Scopus record by KAUST IRTS on 2022-09-13",

year = "2005",

month = aug,

day = "1",

doi = "10.1007/s00340-005-1908-0",

language = "English (US)",

volume = "81",

pages = "503--506",

journal = "Applied Physics B: Lasers and Optics",

issn = "0946-2171",

publisher = "Springer Verlag",

number = "4",

}

TY - JOUR

T1 - Enhancement of the far-field output power and the properties of the very-small-aperture lasers

AU - Gan, Q.

AU - Song, G.

AU - Xu, Y.

AU - Yang, G.

AU - Li, Y.

AU - Cao, Q.

AU - Ma, W.

AU - Gao, J.

AU - Chen, L.

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2005/8/1

Y1 - 2005/8/1

N2 - We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.

AB - We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.

UR - http://link.springer.com/10.1007/s00340-005-1908-0

UR - http://www.scopus.com/inward/record.url?scp=24144468661&partnerID=8YFLogxK

U2 - 10.1007/s00340-005-1908-0

DO - 10.1007/s00340-005-1908-0

M3 - Article

SN - 0946-2171

VL - 81

SP - 503

EP - 506

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 4

ER -

Enhancement of the far-field output power and the properties of the very-small-aperture lasers

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this