We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. © Springer-Verlag 2005.
Bibliographical noteGenerated from Scopus record by KAUST IRTS on 2022-09-13
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)