Abstract
Si/Ta/Co/Cu/CoFeMn (or NiO) spin valves were prepared by a delayed sputtering procedure, in which depositions of Ta and followed layers were intervened by 1 h. The spin valves are found to have better coherent growth with stronger (111) preferred orientations in Co and Cu layers, compared with the traditional continuous method. At the same time, the giant magnetoresistance ratio and spin-dependent scattering are enhanced by a factor of 20%-30%. These results indicate that the coherent growth and the (111) preferred orientation can enhance the spin-dependent scattering of spin valves.
Original language | English (US) |
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Article number | 252503 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 25 |
DOIs | |
State | Published - 2005 |
Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by the National Science Foundation of China Grant Nos. 10174014, 60271013, 10021001, 10321003, and 60490290, and the State Key Project of Fundamental Research Grant Nos. 2001CB610602 and 2002CB613504.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)