Abstract
An ice bath photo-electrochemical (PEC) undercut etching technique to separate devices from substrates is described. Smoothly etched Si-doped (2021) GaN is produced by etching a 40 nm relaxed sacrificial layer single quantum well. This has potential for improving the active region quality of semipolar green-emitter. Removal of unetched misfit dislocations revealed an RMS surface roughness decreasing from = 5.136 to 0.25 nm. In view of the development of green-light emitters, the interplay between the effects of reactant diffusion-limited etch process and defect-selective etching is demonstrated by enhancing PEC etching performance toward a smooth n-type semipolar GaN surface.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 036503 |
| Journal | APPLIED PHYSICS EXPRESS |
| Volume | 12 |
| Issue number | 3 |
| DOIs | |
| State | Published - Feb 28 2019 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2022-06-07Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR1121053). The authors thank Jared Kearns and Philip Chan for their useful comments.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.