Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

Z. B. Guo*, K. B. Li, G. C. Han, J. J. Qiu, Y. K. Zheng, Z. Y. Liu, Y. H. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.

Original languageEnglish (US)
Pages (from-to)1885-1886
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Issue numberIII
StatePublished - May 2004
Externally publishedYes


  • Giant magnetoresistance
  • Hysteresis loops
  • Magnetic properties of interfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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