Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

Z. B. Guo; K. B. Li; G. C. Han; J. J. Qiu; Y. K. Zheng; Z. Y. Liu; Y. H. Wu

doi:10.1016/j.jmmm.2003.12.767

Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

Z. B. Guo^*, K. B. Li, G. C. Han, J. J. Qiu, Y. K. Zheng, Z. Y. Liu, Y. H. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.

Original language	English (US)
Pages (from-to)	1885-1886
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	III
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.767
State	Published - May 2004
Externally published	Yes

Keywords

Giant magnetoresistance
Hysteresis loops
Magnetic properties of interfaces

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2003.12.767

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@article{b2c4f51fe8584d5682c316fa977aa074,

title = "Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates",

abstract = "The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.",

keywords = "Giant magnetoresistance, Hysteresis loops, Magnetic properties of interfaces",

author = "Guo, {Z. B.} and Li, {K. B.} and Han, {G. C.} and Qiu, {J. J.} and Zheng, {Y. K.} and Liu, {Z. Y.} and Wu, {Y. H.}",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.767",

language = "English (US)",

volume = "272-276",

pages = "1885--1886",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "III",

}

TY - JOUR

T1 - Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

AU - Guo, Z. B.

AU - Li, K. B.

AU - Han, G. C.

AU - Qiu, J. J.

AU - Zheng, Y. K.

AU - Liu, Z. Y.

AU - Wu, Y. H.

PY - 2004/5

Y1 - 2004/5

N2 - The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.

AB - The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.

KW - Giant magnetoresistance

KW - Hysteresis loops

KW - Magnetic properties of interfaces

UR - http://www.scopus.com/inward/record.url?scp=23044507690&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2003.12.767

DO - 10.1016/j.jmmm.2003.12.767

M3 - Article

AN - SCOPUS:23044507690

SN - 0304-8853

VL - 272-276

SP - 1885

EP - 1886

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - III

ER -

Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

Abstract

Keywords

ASJC Scopus subject areas

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