Enhancement of magnetoresistance in spin valves with ion sputtered Si substrates

Zaibing Guo*, K. B. Li, G. C. Han, J. J. Qiu, Y. K. Zheng, Z. Y. Liu, Y. H. Wu

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    The pattern of dots with height about 1.2nm is formed on Si substrates by ion sputtering. Top, bottom spin valves, and bottom spin valves with a nano-oxide layer are fabricated on both non-ion sputtered and ion sputtered Si substrates. Magnetoresistance ratio increase around 10% has been achieved in the spin valves on the ion sputtered substrates.

    Original languageEnglish (US)
    Pages (from-to)1885-1886
    Number of pages2
    JournalJournal of Magnetism and Magnetic Materials
    Issue numberIII
    StatePublished - Jan 1 2004


    • Giant magnetoresistance
    • Hysteresis loops
    • Magnetic properties of interfaces

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics


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