Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO
                    2 microsphere arrays

Xiao Hang Li; Yik Khoon Ee; Renbo Song; Nelson Tansu

doi:10.1117/12.875980

Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays

Xiao Hang Li^*, Yik Khoon Ee, Renbo Song, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The enhancement of light extraction efficiency of InGaN quantum well (QW) light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO ₂ microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO ₂ microsphere arrays onto LEDs. The 2-dimensional relatively close-packed and close-packed TiO ₂ microsphere arrays were deposited by the using optimized conditions of the dipping method and RCD method, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.83 times by utilizing 520-nm diameter TiO ₂ microspheres. This enhancement is primarily attributed to increase in the effective photon escape cone due to the matched index and spherical shape of TiO2 microstructures arrays.

Original language	English (US)
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XV
Volume	7954
DOIs	https://doi.org/10.1117/12.875980
State	Published - 2011
Externally published	Yes
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States Duration: Jan 25 2011 → Jan 27 2011

Other

Other	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Country/Territory	United States
City	San Francisco, CA
Period	01/25/11 → 01/27/11

Keywords

InGaN quantum wells
light emitting diodes
light extraction efficiency
matched refractive index
TiO microspheres

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1117/12.875980

Cite this

@inproceedings{645b54897fc142a3b35472d1b127a8e9,

title = "Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays",

abstract = "The enhancement of light extraction efficiency of InGaN quantum well (QW) light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO 2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO 2 microsphere arrays onto LEDs. The 2-dimensional relatively close-packed and close-packed TiO 2 microsphere arrays were deposited by the using optimized conditions of the dipping method and RCD method, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.83 times by utilizing 520-nm diameter TiO 2 microspheres. This enhancement is primarily attributed to increase in the effective photon escape cone due to the matched index and spherical shape of TiO2 microstructures arrays.",

keywords = "InGaN quantum wells, light emitting diodes, light extraction efficiency, matched refractive index, TiO microspheres",

author = "Li, {Xiao Hang} and Ee, {Yik Khoon} and Renbo Song and Nelson Tansu",

year = "2011",

doi = "10.1117/12.875980",

language = "English (US)",

isbn = "9780819484918",

volume = "7954",

booktitle = "Light-Emitting Diodes",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV ; Conference date: 25-01-2011 Through 27-01-2011",

}

Li, XH, Ee, YK, Song, R & Tansu, N 2011, Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. vol. 7954, 79540U, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, United States, 01/25/11. https://doi.org/10.1117/12.875980

Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO 2 microsphere arrays. / Li, Xiao Hang; Ee, Yik Khoon; Song, Renbo et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. Vol. 7954 2011. 79540U.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tansu, Nelson

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AB - The enhancement of light extraction efficiency of InGaN quantum well (QW) light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO 2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO 2 microsphere arrays onto LEDs. The 2-dimensional relatively close-packed and close-packed TiO 2 microsphere arrays were deposited by the using optimized conditions of the dipping method and RCD method, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.83 times by utilizing 520-nm diameter TiO 2 microspheres. This enhancement is primarily attributed to increase in the effective photon escape cone due to the matched index and spherical shape of TiO2 microstructures arrays.

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KW - matched refractive index

KW - TiO microspheres

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