TY - JOUR
T1 - Enhancement of ionic conductivity in sm-doped ceria/yttria-stabilized zirconia heteroepitaxial structures
AU - Sanna, Simone
AU - Esposito, Vincenzo
AU - Tebano, Antonello
AU - Licoccia, Silvia
AU - Traversa, Enrico
AU - Balestrino, Giuseppe
PY - 2010/9/6
Y1 - 2010/9/6
N2 - Recent developments in the fi eld of thin-fi lm growth technologies have allowed control at an atomic level of deposited layers, thus opening new perspectives in the fi eld of engineering of multilayers and heterostructures based on complex oxides.[1] In particular, it is expected that oxide heterostructures, with almost ideal interfaces, may lead to interesting artifi cial materials with novel properties. Artifi cial thin-fi lm oxide structures make the already complex individual bulk properties even more interesting through their interaction at the interface. Following such an approach, a number of heterostructures have been tailored which show extraordinary properties that do not belong to the individual layers. These range from superconductivity at the interface between nonsuperconducting layers to high-mobility 2D conductivity at the interface between insulating oxides.[2,3] The number of possible combinations of these oxides is enormous, and the potential for novel behavior having practical applications represents a strong motivation for this research.
AB - Recent developments in the fi eld of thin-fi lm growth technologies have allowed control at an atomic level of deposited layers, thus opening new perspectives in the fi eld of engineering of multilayers and heterostructures based on complex oxides.[1] In particular, it is expected that oxide heterostructures, with almost ideal interfaces, may lead to interesting artifi cial materials with novel properties. Artifi cial thin-fi lm oxide structures make the already complex individual bulk properties even more interesting through their interaction at the interface. Following such an approach, a number of heterostructures have been tailored which show extraordinary properties that do not belong to the individual layers. These range from superconductivity at the interface between nonsuperconducting layers to high-mobility 2D conductivity at the interface between insulating oxides.[2,3] The number of possible combinations of these oxides is enormous, and the potential for novel behavior having practical applications represents a strong motivation for this research.
UR - http://www.scopus.com/inward/record.url?scp=77956621721&partnerID=8YFLogxK
U2 - 10.1002/smll.200902348
DO - 10.1002/smll.200902348
M3 - Article
C2 - 20690134
AN - SCOPUS:77956621721
SN - 1613-6810
VL - 6
SP - 1863
EP - 1867
JO - Small
JF - Small
IS - 17
ER -