Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

Umesh Chand; Meshal Alawein; Hossein Fariborzi

doi:10.1149/07711.1971ecst

Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

Umesh Chand, Meshal Alawein, Hossein Fariborzi

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4 Scopus citations

Abstract

We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

Original language	English (US)
Pages (from-to)	1971-1976
Number of pages	6
Journal	ECS Transactions
Volume	77
Issue number	11
DOIs	https://doi.org/10.1149/07711.1971ecst
State	Published - Aug 4 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is supported by the Nanofabrication Core Laboratories at King Abdullah University of Science and Technology, Saudi Arabia.

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10.1149/07711.1971ecst

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abstract = "We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.",

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T1 - Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

AU - Chand, Umesh

AU - Alawein, Meshal

AU - Fariborzi, Hossein

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work is supported by the Nanofabrication Core Laboratories at King Abdullah University of Science and Technology, Saudi Arabia.

PY - 2017/8/4

Y1 - 2017/8/4

N2 - We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

AB - We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.

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DO - 10.1149/07711.1971ecst

M3 - Article

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JO - ECS Transactions

JF - ECS Transactions

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ER -

Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

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