Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

Fwzah Hamud Alshammari; Pradipta K. Nayak; Zhenwei Wang; Husam N. Alshareef

doi:10.1021/acsami.6b06498

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

Fwzah Hamud Alshammari, Pradipta K. Nayak, Zhenwei Wang, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Original language	English (US)
Pages (from-to)	22751-22755
Number of pages	5
Journal	ACS Applied Materials & Interfaces
Volume	8
Issue number	35
DOIs	https://doi.org/10.1021/acsami.6b06498
State	Published - Aug 25 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.

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@article{ecece74397204fc5bd93a3b16ce2c82c,

title = "Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics",

abstract = "We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. {\textcopyright} 2016 American Chemical Society.",

author = "Alshammari, {Fwzah Hamud} and Nayak, {Pradipta K.} and Zhenwei Wang and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.",

year = "2016",

month = aug,

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doi = "10.1021/acsami.6b06498",

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T1 - Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

AU - Alshammari, Fwzah Hamud

AU - Nayak, Pradipta K.

AU - Wang, Zhenwei

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors thank the staff of the Nanofabrication Facility and imaging and characterization at KAUST, particularly Ahad Syed and Nimer Wehbe, for their excellent support.

PY - 2016/8/25

Y1 - 2016/8/25

N2 - We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

AB - We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

UR - http://hdl.handle.net/10754/622399

UR - http://pubs.acs.org/doi/full/10.1021/acsami.6b06498

UR - http://www.scopus.com/inward/record.url?scp=84986559302&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b06498

DO - 10.1021/acsami.6b06498

M3 - Article

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SN - 1944-8244

VL - 8

SP - 22751

EP - 22755

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 35

ER -

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

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