Enhanced UV emission of GaN nanowires functionalized by wider bandgap solution-processed p-MnO quantum dots

Dhaifallah Almalawi, Sergei Lopatin, Somak Mitra, Tahani Hassan Flemban, Alexandra-Madalina Siladie, Bruno Gayral, Bruno Daudin, Iman S. Roqan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


GaN-based UV light emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider bandgap (~ 5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ~ 3.9-fold (~ 290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ~1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy (TEM) reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider-bandgap p-MnO QDs to n-GaN NW leads to substantial emission enhancement and a greater radiative recombination contribution, due to the good band alignment between MnO QDs and GaN NW. This work provides valuable insight into an environmentally-friendly strategy for improving UV device performance.
Original languageEnglish (US)
JournalACS Applied Materials & Interfaces
StatePublished - Jul 4 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1319-01-01
Acknowledgements: Authors thanks KAUST for the finance support using the base fund number BAS/1/1319-01-01.


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