Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

Jiang Pu; Kaito Kanahashi; Nguyen Thanh Cuong; Chang-Hsiao Chen; Lain-Jong Li; Susumu Okada; Hiromichi Ohta; Taishi Takenobu

doi:10.1103/PhysRevB.94.014312

Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

Jiang Pu, Kaito Kanahashi, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Taishi Takenobu

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Abstract

The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.

Original language	English (US)
Journal	Physical Review B
Volume	94
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.94.014312
State	Published - Jul 27 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This paper was supported by the Funding Program for the
Next Generation of World-Leading Researchers and Grantsin-
Aid from the Ministry of Education, Culture, Sports,
Science and Technology (MEXT) (Grants No. 16K13618,
No. 26107533, No. 26102012, and No. 25000003) (T.T.) and
the Leading Graduate Program in Science and Engineering,
Waseda University from MEXT (J.P. and K.K.). J.P. was also
supported by the Research Fellowship for Young Scientists
from JSPS. L.J.L. acknowledges support from KAUST (Saudi
Arabia), the Ministry of Science and Technology, the Taiwan
Consortium of Emergent Crystalline, Academia Sinica, and
the Asian Office of Aerospace Research and Development
(AOARD)-134137 (USA). H.O. was supported by Japan
Society for the Promotion of Science-Grants-in-Aid for Scientific
Research (JSPS-KAKENHI) (Grants No. 25246023 and
No. 25106007) and the Asahi Glass Foundation. This paper
was also supported in part by the Network Joint Research
Center for Materials and Devices. S.O. was supported by
JSPS-KAKENHI (Grants No. 25246010, No. 16H00898, and
No. 16H06331).

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10.1103/PhysRevB.94.014312

https://repository.kaust.edu.sa/bitstream/10754/618214/1/PhysRevB.94.014312.pdf

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title = "Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers",

abstract = "The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.",

author = "Jiang Pu and Kaito Kanahashi and Cuong, {Nguyen Thanh} and Chang-Hsiao Chen and Lain-Jong Li and Susumu Okada and Hiromichi Ohta and Taishi Takenobu",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This paper was supported by the Funding Program for the Next Generation of World-Leading Researchers and Grantsin- Aid from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Grants No. 16K13618, No. 26107533, No. 26102012, and No. 25000003) (T.T.) and the Leading Graduate Program in Science and Engineering, Waseda University from MEXT (J.P. and K.K.). J.P. was also supported by the Research Fellowship for Young Scientists from JSPS. L.J.L. acknowledges support from KAUST (Saudi Arabia), the Ministry of Science and Technology, the Taiwan Consortium of Emergent Crystalline, Academia Sinica, and the Asian Office of Aerospace Research and Development (AOARD)-134137 (USA). H.O. was supported by Japan Society for the Promotion of Science-Grants-in-Aid for Scientific Research (JSPS-KAKENHI) (Grants No. 25246023 and No. 25106007) and the Asahi Glass Foundation. This paper was also supported in part by the Network Joint Research Center for Materials and Devices. S.O. was supported by JSPS-KAKENHI (Grants No. 25246010, No. 16H00898, and No. 16H06331).",

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N2 - The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.

AB - The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.

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Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

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