Enhanced terahertz detection using multiple GaAs HEMTs connected in series

Tamer A. Elkhatib; Dmitry B. Veksler; Khaled N. Salama; Xi-C. Zhang; Michael S. Shur

doi:10.1109/MWSYM.2009.5165852

Enhanced terahertz detection using multiple GaAs HEMTs connected in series

Tamer A. Elkhatib, Dmitry B. Veksler, Khaled N. Salama, Xi-C. Zhang, Michael S. Shur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

Original language	English (US)
Title of host publication	2009 IEEE MTT-S International Microwave Symposium Digest
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	937-940
Number of pages	4
ISBN (Print)	9781424428038
DOIs	https://doi.org/10.1109/MWSYM.2009.5165852
State	Published - Jul 22 2009

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

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10.1109/MWSYM.2009.5165852

https://repository.kaust.edu.sa/bitstream/10754/236093/1/ims2009.pdf

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title = "Enhanced terahertz detection using multiple GaAs HEMTs connected in series",

abstract = "We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.",

author = "Elkhatib, {Tamer A.} and Veksler, {Dmitry B.} and Salama, {Khaled N.} and Xi-C. Zhang and Shur, {Michael S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2009",

month = jul,

day = "22",

doi = "10.1109/MWSYM.2009.5165852",

language = "English (US)",

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booktitle = "2009 IEEE MTT-S International Microwave Symposium Digest",

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T1 - Enhanced terahertz detection using multiple GaAs HEMTs connected in series

AU - Elkhatib, Tamer A.

AU - Veksler, Dmitry B.

AU - Salama, Khaled N.

AU - Zhang, Xi-C.

AU - Shur, Michael S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2009/7/22

Y1 - 2009/7/22

N2 - We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

AB - We report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.

UR - http://hdl.handle.net/10754/236093

UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5165852

UR - http://www.scopus.com/inward/record.url?scp=76849117141&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2009.5165852

DO - 10.1109/MWSYM.2009.5165852

M3 - Conference contribution

SN - 9781424428038

SP - 937

EP - 940

BT - 2009 IEEE MTT-S International Microwave Symposium Digest

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Enhanced terahertz detection using multiple GaAs HEMTs connected in series

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