Enhanced Synaptic Features of ZnO/TaOx Bilayer Invisible Memristor for Brain-Inspired Computing

Dayanand Kumar, Lai Boon Keong, Nazek Elatab, Tseung-Yuen Tseng

Research output: Contribution to journalArticlepeer-review

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In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.
Original languageEnglish (US)
JournalIEEE Electron Device Letters
StatePublished - Oct 28 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-10-31
Acknowledgements: This work was supported by the Ministry of Science and Technology, Taiwan, under Project MOST 109-2221-E-009 -034 -MY3 and the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education (MOE), Taiwan. This research was also support by the King Abdullah University of Science and Technology (KAUST) baseline fund.


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