Enhanced Synaptic Features of ZnO/TaOx Bilayer Invisible Memristor for Brain-Inspired Computing

Dayanand Kumar; Lai Boon Keong; Nazek Elatab; Tseung-Yuen Tseng

doi:10.1109/LED.2022.3217983

Enhanced Synaptic Features of ZnO/TaOx Bilayer Invisible Memristor for Brain-Inspired Computing

Dayanand Kumar, Lai Boon Keong, Nazek Elatab, Tseung-Yuen Tseng

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.

Original language	English (US)
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2022.3217983
State	Published - Oct 28 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-10-31
Acknowledgements: This work was supported by the Ministry of Science and Technology, Taiwan, under Project MOST 109-2221-E-009 -034 -MY3 and the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education (MOE), Taiwan. This research was also support by the King Abdullah University of Science and Technology (KAUST) baseline fund.

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https://repository.kaust.edu.sa/bitstream/10754/685262/1/Enhanced_Synaptic_Features_of_ZnO_TaOx_Bilayer_Invisible_Memristor_for_Brain-Inspired_Computing.pdf

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@article{6920f19fccb945729057fe17f8dea140,

title = "Enhanced Synaptic Features of ZnO/TaOx Bilayer Invisible Memristor for Brain-Inspired Computing",

abstract = "In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.",

author = "Dayanand Kumar and Keong, {Lai Boon} and Nazek Elatab and Tseung-Yuen Tseng",

note = "KAUST Repository Item: Exported on 2022-10-31 Acknowledgements: This work was supported by the Ministry of Science and Technology, Taiwan, under Project MOST 109-2221-E-009 -034 -MY3 and the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education (MOE), Taiwan. This research was also support by the King Abdullah University of Science and Technology (KAUST) baseline fund.",

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doi = "10.1109/LED.2022.3217983",

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AU - Kumar, Dayanand

AU - Keong, Lai Boon

AU - Elatab, Nazek

AU - Tseng, Tseung-Yuen

N1 - KAUST Repository Item: Exported on 2022-10-31 Acknowledgements: This work was supported by the Ministry of Science and Technology, Taiwan, under Project MOST 109-2221-E-009 -034 -MY3 and the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education (MOE), Taiwan. This research was also support by the King Abdullah University of Science and Technology (KAUST) baseline fund.

PY - 2022/10/28

Y1 - 2022/10/28

N2 - In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.

AB - In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance (109 cycles) and high-temperature retention (104 s) without any degradation at 100 °C. The device exhibits highly stable repetitive 5130 potentiation (P) and depression (D) epochs with 1.026 M pulses. The multilevel characteristics (MLC) of the device are achieved by changing the pulse height from 0.7 to 1.1 V for long-term potentiation (LTP) and from -0.9 to -1.3 V for long-term depression (LTD) having gradual conductance change for both P and D cases. The synaptic features such as paired-pulse facilitation (PPF) and spike time-dependent plasticity (STDP) are measured using consecutive AC pulses. These unique features confirm that the synaptic device has excellent capability for the application in the brain-inspired computing systems.

UR - http://hdl.handle.net/10754/685262

UR - https://ieeexplore.ieee.org/document/9931672/

U2 - 10.1109/LED.2022.3217983

DO - 10.1109/LED.2022.3217983

M3 - Article

SN - 1558-0563

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Enhanced Synaptic Features of ZnO/TaOx Bilayer Invisible Memristor for Brain-Inspired Computing

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