Enhanced response of bulk heterojunction polymer photodetectors upon incorporating CsPbBr 3 quantum dots

Zhongyuan Ren; Ying Su; Shaoqing Chen; Jiantao Wang; Changhao Wang; Changchun Wang; Pengfei Ma; Fanxu Meng; Qinghui Zeng; Hsing Lin Wang

doi:10.1063/1.5050253

Enhanced response of bulk heterojunction polymer photodetectors upon incorporating CsPbBr 3 quantum dots

Zhongyuan Ren, Ying Su, Shaoqing Chen, Jiantao Wang, Changhao Wang, Changchun Wang, Pengfei Ma, Fanxu Meng, Qinghui Zeng, Hsing Lin Wang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

CsPbBr 3 quantum dots (QDs) were doped into a blend of poly(3-hexylthiophene) and indene-C 60 bisadduct to fabricate bulk heterojunction polymer photodetectors. The addition of the QDs significantly increased the shunt resistance of the device, thereby suppressing the reverse leakage current and improving both the signal-to-noise ratio and the specific detectivity. The photoresponse and recovery time both decreased because of the enhanced built-in electric field and improved charge carrier mobility.

Original language	English (US)
Journal	Applied Physics Letters
Volume	113
Issue number	25
DOIs	https://doi.org/10.1063/1.5050253
State	Published - Dec 17 2018
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-10-23

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Enhanced response of bulk heterojunction polymer photodetectors upon incorporating CsPbBr 3 quantum dots",

abstract = "CsPbBr 3 quantum dots (QDs) were doped into a blend of poly(3-hexylthiophene) and indene-C 60 bisadduct to fabricate bulk heterojunction polymer photodetectors. The addition of the QDs significantly increased the shunt resistance of the device, thereby suppressing the reverse leakage current and improving both the signal-to-noise ratio and the specific detectivity. The photoresponse and recovery time both decreased because of the enhanced built-in electric field and improved charge carrier mobility.",

author = "Zhongyuan Ren and Ying Su and Shaoqing Chen and Jiantao Wang and Changhao Wang and Changchun Wang and Pengfei Ma and Fanxu Meng and Qinghui Zeng and Wang, {Hsing Lin}",

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year = "2018",

month = dec,

day = "17",

doi = "10.1063/1.5050253",

language = "English (US)",

volume = "113",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Enhanced response of bulk heterojunction polymer photodetectors upon incorporating CsPbBr 3 quantum dots

AU - Ren, Zhongyuan

AU - Su, Ying

AU - Chen, Shaoqing

AU - Wang, Jiantao

AU - Wang, Changhao

AU - Wang, Changchun

AU - Ma, Pengfei

AU - Meng, Fanxu

AU - Zeng, Qinghui

AU - Wang, Hsing Lin

N1 - Generated from Scopus record by KAUST IRTS on 2023-10-23

PY - 2018/12/17

Y1 - 2018/12/17

N2 - CsPbBr 3 quantum dots (QDs) were doped into a blend of poly(3-hexylthiophene) and indene-C 60 bisadduct to fabricate bulk heterojunction polymer photodetectors. The addition of the QDs significantly increased the shunt resistance of the device, thereby suppressing the reverse leakage current and improving both the signal-to-noise ratio and the specific detectivity. The photoresponse and recovery time both decreased because of the enhanced built-in electric field and improved charge carrier mobility.

AB - CsPbBr 3 quantum dots (QDs) were doped into a blend of poly(3-hexylthiophene) and indene-C 60 bisadduct to fabricate bulk heterojunction polymer photodetectors. The addition of the QDs significantly increased the shunt resistance of the device, thereby suppressing the reverse leakage current and improving both the signal-to-noise ratio and the specific detectivity. The photoresponse and recovery time both decreased because of the enhanced built-in electric field and improved charge carrier mobility.

UR - https://pubs.aip.org/apl/article/113/25/253301/36102/Enhanced-response-of-bulk-heterojunction-polymer

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U2 - 10.1063/1.5050253

DO - 10.1063/1.5050253

M3 - Article

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Enhanced response of bulk heterojunction polymer photodetectors upon incorporating CsPbBr 3 quantum dots

Abstract

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