Enhanced reliability of hexagonal boron nitride dielectric stacks due to high thermal conductivity

Xianhu Liang, Bin Yuan, Yuanyuan Shi, Fei Hui, Xu Jing, Mario Lanza, Felix Palumbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Electronic devices using graphene and other two dimensional (2D) materials have shown interesting performances. However, the interaction of conductive and semiconducting 2D materials with traditional dielectrics (which are necessary to build up the devices) is still very poor (i.e. the fabrication is challenging and it generates abundant interface defects). Hexagonal Boron Nitride (h-BN) is a layered insulating material that could be used as dielectric stack in 2D materials based devices, as it shows excellent insulating ability and a perfect interaction with graphene and other 2D materials. Here we show the first device-level reliability study of h-BN dielectric stacks and describe the dielectric breakdown (BD) process.
Original languageEnglish (US)
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Print)9781538654798
StatePublished - May 25 2018
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16


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