Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes

Zhe Zhuang; Daisuke Iida; Kazuhiro Ohkawa

doi:10.1364/oe.403168

Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa

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30 Scopus citations

Abstract

We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densities

Original language	English (US)
Pages (from-to)	30423
Journal	Optics Express
Volume	28
Issue number	21
DOIs	https://doi.org/10.1364/oe.403168
State	Published - Sep 20 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).

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10.1364/oe.403168

https://repository.kaust.edu.sa/bitstream/10754/665351/1/enhanced%20performance.pdf

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title = "Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes",

abstract = "We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densities",

author = "Zhe Zhuang and Daisuke Iida and Kazuhiro Ohkawa",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).",

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doi = "10.1364/oe.403168",

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AU - Zhuang, Zhe

AU - Iida, Daisuke

AU - Ohkawa, Kazuhiro

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).

PY - 2020/9/20

Y1 - 2020/9/20

N2 - We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densities

AB - We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densities

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Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes

Abstract

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