Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design

Qian Chen; Jiangnan Dai; Xiaohang Li; Yang Gao; Hanling Long; Zi-hui Zhang; Changqing Chen; Hao Chung Kuo

doi:10.1109/LED.2019.2948952

Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design

Qian Chen, Jiangnan Dai, Xiaohang Li, Yang Gao, Hanling Long, Zi-hui Zhang, Changqing Chen, Hao Chung Kuo

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.

Original language	English (US)
Pages (from-to)	1925-1928
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1109/LED.2019.2948952
State	Published - Oct 22 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Key Research and Development Program of China under Grant 2018YFB0406602, and in part by the National Natural Science Foundation of China under Grant 11574166, Grant 61377034, and Grant 61774065.

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10.1109/LED.2019.2948952

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@article{f5f0e484d8694f3e8f30b9725e9ab194,

title = "Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design",

abstract = "Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.",

author = "Qian Chen and Jiangnan Dai and Xiaohang Li and Yang Gao and Hanling Long and Zi-hui Zhang and Changqing Chen and Kuo, {Hao Chung}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported in part by the National Key Research and Development Program of China under Grant 2018YFB0406602, and in part by the National Natural Science Foundation of China under Grant 11574166, Grant 61377034, and Grant 61774065.",

year = "2019",

month = oct,

day = "22",

doi = "10.1109/LED.2019.2948952",

language = "English (US)",

volume = "40",

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journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design

AU - Chen, Qian

AU - Dai, Jiangnan

AU - Li, Xiaohang

AU - Gao, Yang

AU - Long, Hanling

AU - Zhang, Zi-hui

AU - Chen, Changqing

AU - Kuo, Hao Chung

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported in part by the National Key Research and Development Program of China under Grant 2018YFB0406602, and in part by the National Natural Science Foundation of China under Grant 11574166, Grant 61377034, and Grant 61774065.

PY - 2019/10/22

Y1 - 2019/10/22

N2 - Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.

AB - Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.

UR - http://hdl.handle.net/10754/660988

UR - https://ieeexplore.ieee.org/document/8879560/

UR - http://www.scopus.com/inward/record.url?scp=85076281188&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2948952

DO - 10.1109/LED.2019.2948952

M3 - Article

SN - 0741-3106

VL - 40

SP - 1925

EP - 1928

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Enhanced Optical Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Electrode Patterns Design

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