Low external quantum efficiency of deep ultraviolet light-emitting diodes (DUV LEDs) and current crowding can result in considerable heat generation, which has a great negative impact on device performance. In this paper, we investigate the influence of different electrode patterns on the photoelectric and thermal performance of DUV LEDs. We find that different electrode designs can achieve drastically different optical powers, with the superior design being the n-type electrode surrounding the active region. Moreover, compared with the counterpart, the superior design does not affect the electrical performance. The main reason is that the N-surrounding electrode pattern can provide enough current paths for carrier transport, thus realizing a more uniform current injection and can further improve the external quantum efficiency for DUV LEDs.
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE Electron Device Letters|
|State||Published - Oct 22 2019|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported in part by the National Key Research and Development Program of China under Grant 2018YFB0406602, and in part by the National Natural Science Foundation of China under Grant 11574166, Grant 61377034, and Grant 61774065.