Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

Nazek El-Atab, Furkan Cimen, Sabri Alkis, Ali K. Okyay, Ammar Nayfeh

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage Vt shift (4 V) at low operating voltage (6/-6 V), good retention (>10 yr), and good endurance characteristic (>104 cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced Vt shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger Vt shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ¥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

Original languageEnglish (US)
Article number033102
JournalApplied Physics Letters
Issue number3
StatePublished - Jul 21 2014

Bibliographical note

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© 2014 AIP Publishing LLC.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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