Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Daisuke Iida; Shen Lu; Sota Hirahara; Kazumasa Niwa; Satoshi Kamiyama; Kazuhiro Ohkawa

doi:10.1016/j.jcrysgro.2016.05.023

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Daisuke Iida, Shen Lu, Sota Hirahara, Kazumasa Niwa, Satoshi Kamiyama, Kazuhiro Ohkawa

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

Original language	English (US)
Pages (from-to)	105-108
Number of pages	4
Journal	Journal of Crystal Growth
Volume	448
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.05.023
State	Published - Aug 15 2016
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Materials Chemistry
Inorganic Chemistry
Condensed Matter Physics

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10.1016/j.jcrysgro.2016.05.023

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@article{731c817b24554eb6a806875798dfde94,

title = "Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers",

abstract = "We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.",

author = "Daisuke Iida and Shen Lu and Sota Hirahara and Kazumasa Niwa and Satoshi Kamiyama and Kazuhiro Ohkawa",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2016",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2016.05.023",

language = "English (US)",

volume = "448",

pages = "105--108",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

AU - Iida, Daisuke

AU - Lu, Shen

AU - Hirahara, Sota

AU - Niwa, Kazumasa

AU - Kamiyama, Satoshi

AU - Ohkawa, Kazuhiro

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2016/8/15

Y1 - 2016/8/15

N2 - We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

AB - We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024816302457

UR - http://www.scopus.com/inward/record.url?scp=84969921135&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.05.023

DO - 10.1016/j.jcrysgro.2016.05.023

M3 - Article

SN - 0022-0248

VL - 448

SP - 105

EP - 108

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Abstract

Bibliographical note

ASJC Scopus subject areas

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