Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Daisuke Iida; Shen Lu; Sota Hirahara; Kazumasa Niwa; Satoshi Kamiyama; Kazuhiro Ohkawa

doi:10.1016/j.jcrysgro.2016.05.023

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Daisuke Iida^*, Shen Lu, Sota Hirahara, Kazumasa Niwa, Satoshi Kamiyama, Kazuhiro Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

We investigated the effect of a combined AlN/Al_0.03Ga_0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al_0.03Ga_0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al_0.03Ga_0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

Original language	English (US)
Pages (from-to)	105-108
Number of pages	4
Journal	Journal of Crystal Growth
Volume	448
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.05.023
State	Published - Aug 15 2016
Externally published	Yes

Keywords

A2. Quantum wells
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B3. Light emitting diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2016.05.023

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@article{17420e51985849b78ae00c87627d45b8,

title = "Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers",

abstract = "We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.",

keywords = "A2. Quantum wells, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B3. Light emitting diodes",

author = "Daisuke Iida and Shen Lu and Sota Hirahara and Kazumasa Niwa and Satoshi Kamiyama and Kazuhiro Ohkawa",

year = "2016",

month = aug,

day = "15",

doi = "10.1016/j.jcrysgro.2016.05.023",

language = "English (US)",

volume = "448",

pages = "105--108",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

AU - Iida, Daisuke

AU - Lu, Shen

AU - Hirahara, Sota

AU - Niwa, Kazumasa

AU - Kamiyama, Satoshi

AU - Ohkawa, Kazuhiro

PY - 2016/8/15

Y1 - 2016/8/15

N2 - We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

AB - We investigated the effect of a combined AlN/Al0.03Ga0.97N barrier on InGaN-based amber light-emitting diodes (LEDs) grown by metalorganic vapor-phase epitaxy. InGaN-based multiple quantum wells with a combined AlN/Al0.03Ga0.97N barrier showed intense photoluminescence with a narrow full-width at half-maximum. The amber LEDs with a combined AlN/Al0.03Ga0.97N barrier achieved a light output power enhanced approximately 2.5-fold at 20 mA compared to that of the LED with a combined AlN/GaN barrier, owing to the reduction of defects in InGaN active layers. Thus, the efficiency of high-In-content InGaN-based LEDs can be improved in the spectrum range of amber.

KW - A2. Quantum wells

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

KW - B3. Light emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=84969921135&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.05.023

DO - 10.1016/j.jcrysgro.2016.05.023

M3 - Article

AN - SCOPUS:84969921135

SN - 0022-0248

VL - 448

SP - 105

EP - 108

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Abstract

Keywords

ASJC Scopus subject areas

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