Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs

Zhihua Zheng; Qian Chen; Jiangnan Dai; Ange Wang; Renli Liang; Yi Zhang; Maocheng Shan; Feng Wu; Wei Zhang; Changqing Chen; Xiaohang Li

doi:10.1016/j.optlastec.2021.107360

Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs

Zhihua Zheng, Qian Chen, Jiangnan Dai, Ange Wang, Renli Liang, Yi Zhang, Maocheng Shan, Feng Wu, Wei Zhang, Changqing Chen, Xiaohang Li

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

This work reports on the packaging structure of double-layer nano-pattern arrays (NPAs) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), which can significantly enhance the light extraction efficiency (LEE), a major device performance bottleneck. The double-layer NPAs were fabricated on the surface of the flip-chip DUV LED by etching sapphire and coating the fluoropolymer resin, which can alleviate the total internal reflection (TIR) at the top interfaces and enhance light extraction on sidewalls, leading to the great improvement of both TE and TM-polarized light. As a result, the 273 nm DUV LED with double-layer NPAs realized 28.3% enhancement in light output power (LOP) compared with the reference device without the NPA at large current of 100 mA. High peak external quantum efficiency (EQE) and wall-plug efficiency (WPE) of 5.19% and 4.38% were demonstrated, respectively. Combined with the finite element analysis (FEA), it is further confirmed that the double-layer NPAs have higher external coupling efficiency to enhance LEE. The proposed LEE enhancement strategy comes from the combination of nanostructured materials and packaging technology, which is cost-effective and meets mass production, providing efficient value in practical applications of UV devices.

Original language	English (US)
Pages (from-to)	107360
Journal	Optics and Laser Technology
Volume	143
DOIs	https://doi.org/10.1016/j.optlastec.2021.107360
State	Published - Jun 27 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-08-06
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: This work is supported by the Key Project of Chinese National Development Programs (Grant No. 2019YFA0708203), the National Natural Science Foundation of China (Grant No. 61774065, 61974174), the Center for Nanoscale Characterization & Devices (CNCD), WNLO of HUST, and the Center of Micro-Fabrication and Characterization (CMFC) of WNLO for the support in EL tests. The KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.optlastec.2021.107360

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@article{85391d3183e140c8b8245a3f92734b22,

title = "Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs",

abstract = "This work reports on the packaging structure of double-layer nano-pattern arrays (NPAs) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), which can significantly enhance the light extraction efficiency (LEE), a major device performance bottleneck. The double-layer NPAs were fabricated on the surface of the flip-chip DUV LED by etching sapphire and coating the fluoropolymer resin, which can alleviate the total internal reflection (TIR) at the top interfaces and enhance light extraction on sidewalls, leading to the great improvement of both TE and TM-polarized light. As a result, the 273 nm DUV LED with double-layer NPAs realized 28.3% enhancement in light output power (LOP) compared with the reference device without the NPA at large current of 100 mA. High peak external quantum efficiency (EQE) and wall-plug efficiency (WPE) of 5.19% and 4.38% were demonstrated, respectively. Combined with the finite element analysis (FEA), it is further confirmed that the double-layer NPAs have higher external coupling efficiency to enhance LEE. The proposed LEE enhancement strategy comes from the combination of nanostructured materials and packaging technology, which is cost-effective and meets mass production, providing efficient value in practical applications of UV devices.",

author = "Zhihua Zheng and Qian Chen and Jiangnan Dai and Ange Wang and Renli Liang and Yi Zhang and Maocheng Shan and Feng Wu and Wei Zhang and Changqing Chen and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2021-08-06 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: This work is supported by the Key Project of Chinese National Development Programs (Grant No. 2019YFA0708203), the National Natural Science Foundation of China (Grant No. 61774065, 61974174), the Center for Nanoscale Characterization & Devices (CNCD), WNLO of HUST, and the Center of Micro-Fabrication and Characterization (CMFC) of WNLO for the support in EL tests. The KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.",

year = "2021",

month = jun,

day = "27",

doi = "10.1016/j.optlastec.2021.107360",

language = "English (US)",

volume = "143",

pages = "107360",

journal = "Optics and Laser Technology",

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T1 - Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs

AU - Zheng, Zhihua

AU - Chen, Qian

AU - Dai, Jiangnan

AU - Wang, Ange

AU - Liang, Renli

AU - Zhang, Yi

AU - Shan, Maocheng

AU - Wu, Feng

AU - Zhang, Wei

AU - Chen, Changqing

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2021-08-06 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: This work is supported by the Key Project of Chinese National Development Programs (Grant No. 2019YFA0708203), the National Natural Science Foundation of China (Grant No. 61774065, 61974174), the Center for Nanoscale Characterization & Devices (CNCD), WNLO of HUST, and the Center of Micro-Fabrication and Characterization (CMFC) of WNLO for the support in EL tests. The KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.

PY - 2021/6/27

Y1 - 2021/6/27

N2 - This work reports on the packaging structure of double-layer nano-pattern arrays (NPAs) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), which can significantly enhance the light extraction efficiency (LEE), a major device performance bottleneck. The double-layer NPAs were fabricated on the surface of the flip-chip DUV LED by etching sapphire and coating the fluoropolymer resin, which can alleviate the total internal reflection (TIR) at the top interfaces and enhance light extraction on sidewalls, leading to the great improvement of both TE and TM-polarized light. As a result, the 273 nm DUV LED with double-layer NPAs realized 28.3% enhancement in light output power (LOP) compared with the reference device without the NPA at large current of 100 mA. High peak external quantum efficiency (EQE) and wall-plug efficiency (WPE) of 5.19% and 4.38% were demonstrated, respectively. Combined with the finite element analysis (FEA), it is further confirmed that the double-layer NPAs have higher external coupling efficiency to enhance LEE. The proposed LEE enhancement strategy comes from the combination of nanostructured materials and packaging technology, which is cost-effective and meets mass production, providing efficient value in practical applications of UV devices.

AB - This work reports on the packaging structure of double-layer nano-pattern arrays (NPAs) for AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), which can significantly enhance the light extraction efficiency (LEE), a major device performance bottleneck. The double-layer NPAs were fabricated on the surface of the flip-chip DUV LED by etching sapphire and coating the fluoropolymer resin, which can alleviate the total internal reflection (TIR) at the top interfaces and enhance light extraction on sidewalls, leading to the great improvement of both TE and TM-polarized light. As a result, the 273 nm DUV LED with double-layer NPAs realized 28.3% enhancement in light output power (LOP) compared with the reference device without the NPA at large current of 100 mA. High peak external quantum efficiency (EQE) and wall-plug efficiency (WPE) of 5.19% and 4.38% were demonstrated, respectively. Combined with the finite element analysis (FEA), it is further confirmed that the double-layer NPAs have higher external coupling efficiency to enhance LEE. The proposed LEE enhancement strategy comes from the combination of nanostructured materials and packaging technology, which is cost-effective and meets mass production, providing efficient value in practical applications of UV devices.

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UR - https://linkinghub.elsevier.com/retrieve/pii/S0030399221004485

UR - http://www.scopus.com/inward/record.url?scp=85111048639&partnerID=8YFLogxK

U2 - 10.1016/j.optlastec.2021.107360

DO - 10.1016/j.optlastec.2021.107360

M3 - Article

SN - 0030-3992

VL - 143

SP - 107360

JO - Optics and Laser Technology

JF - Optics and Laser Technology

ER -

Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs

Abstract

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ASJC Scopus subject areas

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