Enhanced hot-hole induced degradation of strained p-channel metal oxide semiconductor transistors in complementary metal oxide semiconductor technology with 2.0 nm gate oxide
Kwang Seng See*, Wai Shing Lau, Jae Gon Lee, Suey Li Toh, Hong Liao, L. I. Kun, Elgin Kiok Boone Quek, Lap Hung Chan
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
Dive into the research topics of 'Enhanced hot-hole induced degradation of strained p-channel metal oxide semiconductor transistors in complementary metal oxide semiconductor technology with 2.0 nm gate oxide'. Together they form a unique fingerprint.