Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes

Wen Gu; Yi Lu; Zhiyuan Liu; Che-Hao Liao; Jianchang Yan; Junxi Wang; Jinmin Li; Xiaohang Li

doi:10.1016/j.spmi.2021.107128

Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes

Wen Gu, Yi Lu, Zhiyuan Liu, Che-Hao Liao, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaohang Li

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The hole concentration in the strain-compensated B0.14Al0.86N/Al0.5Ga0.5N superlattice (SCSL) is investigated. Compared with the Al0.6Ga0.4N/Al0.5Ga0.5N SL, the effective hole concentration in the SCSL could be improved from 1.1 × 1017 cm−3 to 8.7 × 1018 cm−3 due to the remarkably enlarged valence band bending from 53 meV to 533 meV. We then propose the ultraviolet light-emitting diode (UV LED) structure emitting at 284 nm with the SCSL p-region. Compared with the bulk p-region structure, the UV LED with the SCSL p-region shows improved output characteristics due to the reduced electron leakage and improved hole injection ability. The internal quantum efficiency (IQE) and droop ratio of the SCSL LED structure increases from 49.5% to 54.1% and decreases from 36.8% to 13.6%, respectively. Moreover, the light output powers of the Al0.6Ga0.4N/Al0.5Ga0.5N SL structure and SCSL structure have been improved by 16.3% and 49.1% over the bulk p-region counterpart. Our results indicate that the SCSL structure can be a promising candidate for the high-performance UV LED.

Original language	English (US)
Pages (from-to)	107128
Journal	Superlattices and Microstructures
DOIs	https://doi.org/10.1016/j.spmi.2021.107128
State	Published - Dec 2021

Bibliographical note

KAUST Repository Item: Exported on 2022-01-06
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The KAUST authors acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors acknowledge the support of the National Key R&D Program of China (Nos. 2016YFB0400800), the National Natural Sciences Foundation of China (Grant Nos. 62022080, 61904176), Beijing Nova Program Z181100006218007, Shanxi Key R&D Program 20201102013.

ASJC Scopus subject areas

General Materials Science
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.spmi.2021.107128

https://repository.kaust.edu.sa/bitstream/10754/674885/1/1-s2.0-S0749603621003293-main.pdf

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@article{e8c9dcfebcc84b1bbe9ff2bbd83a9b46,

title = "Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes",

abstract = "The hole concentration in the strain-compensated B0.14Al0.86N/Al0.5Ga0.5N superlattice (SCSL) is investigated. Compared with the Al0.6Ga0.4N/Al0.5Ga0.5N SL, the effective hole concentration in the SCSL could be improved from 1.1 × 1017 cm−3 to 8.7 × 1018 cm−3 due to the remarkably enlarged valence band bending from 53 meV to 533 meV. We then propose the ultraviolet light-emitting diode (UV LED) structure emitting at 284 nm with the SCSL p-region. Compared with the bulk p-region structure, the UV LED with the SCSL p-region shows improved output characteristics due to the reduced electron leakage and improved hole injection ability. The internal quantum efficiency (IQE) and droop ratio of the SCSL LED structure increases from 49.5% to 54.1% and decreases from 36.8% to 13.6%, respectively. Moreover, the light output powers of the Al0.6Ga0.4N/Al0.5Ga0.5N SL structure and SCSL structure have been improved by 16.3% and 49.1% over the bulk p-region counterpart. Our results indicate that the SCSL structure can be a promising candidate for the high-performance UV LED.",

author = "Wen Gu and Yi Lu and Zhiyuan Liu and Che-Hao Liao and Jianchang Yan and Junxi Wang and Jinmin Li and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2022-01-06 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The KAUST authors acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors acknowledge the support of the National Key R&D Program of China (Nos. 2016YFB0400800), the National Natural Sciences Foundation of China (Grant Nos. 62022080, 61904176), Beijing Nova Program Z181100006218007, Shanxi Key R&D Program 20201102013.",

year = "2021",

month = dec,

doi = "10.1016/j.spmi.2021.107128",

language = "English (US)",

pages = "107128",

journal = "Superlattices and Microstructures",

issn = "1096-3677",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes

AU - Gu, Wen

AU - Lu, Yi

AU - Liu, Zhiyuan

AU - Liao, Che-Hao

AU - Yan, Jianchang

AU - Wang, Junxi

AU - Li, Jinmin

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2022-01-06 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The KAUST authors acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors acknowledge the support of the National Key R&D Program of China (Nos. 2016YFB0400800), the National Natural Sciences Foundation of China (Grant Nos. 62022080, 61904176), Beijing Nova Program Z181100006218007, Shanxi Key R&D Program 20201102013.

PY - 2021/12

Y1 - 2021/12

N2 - The hole concentration in the strain-compensated B0.14Al0.86N/Al0.5Ga0.5N superlattice (SCSL) is investigated. Compared with the Al0.6Ga0.4N/Al0.5Ga0.5N SL, the effective hole concentration in the SCSL could be improved from 1.1 × 1017 cm−3 to 8.7 × 1018 cm−3 due to the remarkably enlarged valence band bending from 53 meV to 533 meV. We then propose the ultraviolet light-emitting diode (UV LED) structure emitting at 284 nm with the SCSL p-region. Compared with the bulk p-region structure, the UV LED with the SCSL p-region shows improved output characteristics due to the reduced electron leakage and improved hole injection ability. The internal quantum efficiency (IQE) and droop ratio of the SCSL LED structure increases from 49.5% to 54.1% and decreases from 36.8% to 13.6%, respectively. Moreover, the light output powers of the Al0.6Ga0.4N/Al0.5Ga0.5N SL structure and SCSL structure have been improved by 16.3% and 49.1% over the bulk p-region counterpart. Our results indicate that the SCSL structure can be a promising candidate for the high-performance UV LED.

AB - The hole concentration in the strain-compensated B0.14Al0.86N/Al0.5Ga0.5N superlattice (SCSL) is investigated. Compared with the Al0.6Ga0.4N/Al0.5Ga0.5N SL, the effective hole concentration in the SCSL could be improved from 1.1 × 1017 cm−3 to 8.7 × 1018 cm−3 due to the remarkably enlarged valence band bending from 53 meV to 533 meV. We then propose the ultraviolet light-emitting diode (UV LED) structure emitting at 284 nm with the SCSL p-region. Compared with the bulk p-region structure, the UV LED with the SCSL p-region shows improved output characteristics due to the reduced electron leakage and improved hole injection ability. The internal quantum efficiency (IQE) and droop ratio of the SCSL LED structure increases from 49.5% to 54.1% and decreases from 36.8% to 13.6%, respectively. Moreover, the light output powers of the Al0.6Ga0.4N/Al0.5Ga0.5N SL structure and SCSL structure have been improved by 16.3% and 49.1% over the bulk p-region counterpart. Our results indicate that the SCSL structure can be a promising candidate for the high-performance UV LED.

UR - http://hdl.handle.net/10754/674885

UR - https://linkinghub.elsevier.com/retrieve/pii/S0749603621003293

UR - http://www.scopus.com/inward/record.url?scp=85121818221&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2021.107128

DO - 10.1016/j.spmi.2021.107128

M3 - Article

SN - 1096-3677

SP - 107128

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Enhanced hole concentration in strain-compensated BAlN/AlGaN superlattice for deep ultraviolet light-emitting diodes

Abstract

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