Engineering the interaction forces to optimize CMP performance

G. B. Basim; I. Vakarelski; P. Singh; B. M. Moudgil

doi:10.1557/proc-732-i3.5

Engineering the interaction forces to optimize CMP performance

G. B. Basim^*, I. Vakarelski, P. Singh, B. M. Moudgil

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The main objective of Chemical Mechanical Polishing (CMP) process is to planarize the metal or dielectric layers deposited on the wafer surfaces in microelectronics device manufacturing. In CMP, slurries containing submicrometer size particles and chemicals are used to achieve planarization. An effective polishing requires an optimal material removal rate with minimal surface deformation. Therefore, it is important to control the particle-substrate interactions that are responsible for the material removal and the particle-particle interactions, which control the slurry stability and consequently the defect density. This paper discusses the impact of interaction forces on polishing, and underlines the scientific guidelines to formulate consistently high performing CMP slurries.

Original language	English (US)
Title of host publication	Chemical-Mechanical Planarization
Publisher	Materials Research Society
Pages	73-77
Number of pages	5
ISBN (Print)	1558996680, 9781558996687
DOIs	https://doi.org/10.1557/proc-732-i3.5
State	Published - 2002
Externally published	Yes
Event	2002 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 1 2002 → Apr 5 2002

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	732
ISSN (Print)	0272-9172

Other

Other	2002 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	04/1/02 → 04/5/02

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Engineering the interaction forces to optimize CMP performance",

abstract = "The main objective of Chemical Mechanical Polishing (CMP) process is to planarize the metal or dielectric layers deposited on the wafer surfaces in microelectronics device manufacturing. In CMP, slurries containing submicrometer size particles and chemicals are used to achieve planarization. An effective polishing requires an optimal material removal rate with minimal surface deformation. Therefore, it is important to control the particle-substrate interactions that are responsible for the material removal and the particle-particle interactions, which control the slurry stability and consequently the defect density. This paper discusses the impact of interaction forces on polishing, and underlines the scientific guidelines to formulate consistently high performing CMP slurries.",

author = "Basim, {G. B.} and I. Vakarelski and P. Singh and Moudgil, {B. M.}",

year = "2002",

doi = "10.1557/proc-732-i3.5",

language = "English (US)",

isbn = "1558996680",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "73--77",

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address = "United States",

note = "2002 MRS Spring Meeting ; Conference date: 01-04-2002 Through 05-04-2002",

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T1 - Engineering the interaction forces to optimize CMP performance

AU - Basim, G. B.

AU - Vakarelski, I.

AU - Singh, P.

AU - Moudgil, B. M.

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Y1 - 2002

N2 - The main objective of Chemical Mechanical Polishing (CMP) process is to planarize the metal or dielectric layers deposited on the wafer surfaces in microelectronics device manufacturing. In CMP, slurries containing submicrometer size particles and chemicals are used to achieve planarization. An effective polishing requires an optimal material removal rate with minimal surface deformation. Therefore, it is important to control the particle-substrate interactions that are responsible for the material removal and the particle-particle interactions, which control the slurry stability and consequently the defect density. This paper discusses the impact of interaction forces on polishing, and underlines the scientific guidelines to formulate consistently high performing CMP slurries.

AB - The main objective of Chemical Mechanical Polishing (CMP) process is to planarize the metal or dielectric layers deposited on the wafer surfaces in microelectronics device manufacturing. In CMP, slurries containing submicrometer size particles and chemicals are used to achieve planarization. An effective polishing requires an optimal material removal rate with minimal surface deformation. Therefore, it is important to control the particle-substrate interactions that are responsible for the material removal and the particle-particle interactions, which control the slurry stability and consequently the defect density. This paper discusses the impact of interaction forces on polishing, and underlines the scientific guidelines to formulate consistently high performing CMP slurries.

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U2 - 10.1557/proc-732-i3.5

DO - 10.1557/proc-732-i3.5

M3 - Conference contribution

AN - SCOPUS:34249891101

SN - 1558996680

SN - 9781558996687

T3 - Materials Research Society Symposium Proceedings

SP - 73

EP - 77

BT - Chemical-Mechanical Planarization

PB - Materials Research Society

T2 - 2002 MRS Spring Meeting

Y2 - 1 April 2002 through 5 April 2002

ER -

Engineering the interaction forces to optimize CMP performance

Abstract

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