Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene

A. M.R. Baker; J. A. Alexander-Webber; T. Altebaeumer; S. D. McMullan; T. J.B.M. Janssen; A. Tzalenchuk; S. Lara-Avila; S. Kubatkin; R. Yakimova; C. T. Lin; L. J. Li; R. J. Nicholas

doi:10.1103/PhysRevB.87.045414

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene

A. M.R. Baker^*, J. A. Alexander-Webber, T. Altebaeumer, S. D. McMullan, T. J.B.M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, C. T. Lin, L. J. Li, R. J. Nicholas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by ∼40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of Te4 at low temperatures and depend weakly on carrier density â̂n^-12, evidence for enhancement of the energy loss rate due to disorder in CVD samples.

Original language	English (US)
Article number	045414
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	87
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.87.045414
State	Published - Jan 11 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.87.045414

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Baker, A. M. R., Alexander-Webber, J. A., Altebaeumer, T., McMullan, S. D., Janssen, T. J. B. M., Tzalenchuk, A., Lara-Avila, S., Kubatkin, S., Yakimova, R., Lin, C. T., Li, L. J., & Nicholas, R. J. (2013). Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene. Physical Review B - Condensed Matter and Materials Physics, 87(4), Article 045414. https://doi.org/10.1103/PhysRevB.87.045414

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title = "Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene",

abstract = "Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by ∼40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of Te4 at low temperatures and depend weakly on carrier density {\^a}̂n-12, evidence for enhancement of the energy loss rate due to disorder in CVD samples.",

author = "Baker, {A. M.R.} and Alexander-Webber, {J. A.} and T. Altebaeumer and McMullan, {S. D.} and Janssen, {T. J.B.M.} and A. Tzalenchuk and S. Lara-Avila and S. Kubatkin and R. Yakimova and Lin, {C. T.} and Li, {L. J.} and Nicholas, {R. J.}",

year = "2013",

month = jan,

day = "11",

doi = "10.1103/PhysRevB.87.045414",

language = "English (US)",

volume = "87",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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publisher = "American Institute of Physics",

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Baker, AMR, Alexander-Webber, JA, Altebaeumer, T, McMullan, SD, Janssen, TJBM, Tzalenchuk, A, Lara-Avila, S, Kubatkin, S, Yakimova, R, Lin, CT, Li, LJ & Nicholas, RJ 2013, 'Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene', Physical Review B - Condensed Matter and Materials Physics, vol. 87, no. 4, 045414. https://doi.org/10.1103/PhysRevB.87.045414

TY - JOUR

T1 - Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene

AU - Baker, A. M.R.

AU - Alexander-Webber, J. A.

AU - Altebaeumer, T.

AU - McMullan, S. D.

AU - Janssen, T. J.B.M.

AU - Tzalenchuk, A.

AU - Lara-Avila, S.

AU - Kubatkin, S.

AU - Yakimova, R.

AU - Lin, C. T.

AU - Li, L. J.

AU - Nicholas, R. J.

PY - 2013/1/11

Y1 - 2013/1/11

N2 - Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by ∼40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of Te4 at low temperatures and depend weakly on carrier density â̂n-12, evidence for enhancement of the energy loss rate due to disorder in CVD samples.

AB - Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation, and chemical vapor deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by ∼40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of Te4 at low temperatures and depend weakly on carrier density â̂n-12, evidence for enhancement of the energy loss rate due to disorder in CVD samples.

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U2 - 10.1103/PhysRevB.87.045414

DO - 10.1103/PhysRevB.87.045414

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SN - 1098-0121

VL - 87

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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M1 - 045414

ER -

Energy loss rates of hot Dirac fermions in epitaxial, exfoliated, and CVD graphene

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