Emission mechanism in the terbium complex doped PVK system

Xiufang Li; Zhenbo Deng; Yuanyuan Zhang; Yumeng Shi; Ruifen Wang

doi:10.1007/s12200-008-0010-8

Emission mechanism in the terbium complex doped PVK system

Xiufang Li, Zhenbo Deng^*, Yuanyuan Zhang, Yumeng Shi, Ruifen Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new kind of rare earth (RE) complex Tb(o-MBA)₃phen was synthesized and used as an emitting material in electroluminescence. The material was doped into poly(N-vinylcarbazole) (PVK) as the emitting layer, which was made by spin coating. Three kinds of devices were fabricated with the structures: (A) ITO/PVK:Tb(o-MBA)₃phen/LiF/Al; (B) ITO/PVK:Tb(o-MBA)₃phen/BCP/AlQ₃/LiF/Al; (C) ITO/BCP/PVK: Tb(o-MBA)₃phen/AlQ₃/LiF/Al. Bright green emission could be obtained from device (A) and (C). The photoluminescence (PL) and electroluminescence (EL) mechanisms of this material had been investigated. Since there was an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex, there should be a Förster energy transfer process between them. The excitation spectrum of PVK doped Tb(o-MBA)₃phen system is similar with the excitation spectrum of PVK, yet it is different from that of Tb(o-MBA)₃phen. So, the emission of Tb(o-MBA)₃phen should partly come from the excitation of PVK while in the organic light-emitting diode (OLED), based on Tb(o-MBA)₃phen, the emission mainly comes from the direct recombination of electron and hole. Bright green emission can be obtained from the optimized multi-layer device (C) and the highest EL brightness reached 180 cd/m² at the voltage of 17 V.

Original language	English (US)
Pages (from-to)	130-133
Number of pages	4
Journal	Frontiers of Optoelectronics in China
Volume	1
Issue number	1-2
DOIs	https://doi.org/10.1007/s12200-008-0010-8
State	Published - 2008
Externally published	Yes

Keywords

exciton
organic light-emitting diode (OLED)
terbium complex

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1007/s12200-008-0010-8

Cite this

@article{7ea45ee1993e466aae359d0f5c36ed37,

title = "Emission mechanism in the terbium complex doped PVK system",

abstract = "A new kind of rare earth (RE) complex Tb(o-MBA)3phen was synthesized and used as an emitting material in electroluminescence. The material was doped into poly(N-vinylcarbazole) (PVK) as the emitting layer, which was made by spin coating. Three kinds of devices were fabricated with the structures: (A) ITO/PVK:Tb(o-MBA)3phen/LiF/Al; (B) ITO/PVK:Tb(o-MBA)3phen/BCP/AlQ3/LiF/Al; (C) ITO/BCP/PVK: Tb(o-MBA)3phen/AlQ3/LiF/Al. Bright green emission could be obtained from device (A) and (C). The photoluminescence (PL) and electroluminescence (EL) mechanisms of this material had been investigated. Since there was an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex, there should be a F{\"o}rster energy transfer process between them. The excitation spectrum of PVK doped Tb(o-MBA)3phen system is similar with the excitation spectrum of PVK, yet it is different from that of Tb(o-MBA)3phen. So, the emission of Tb(o-MBA)3phen should partly come from the excitation of PVK while in the organic light-emitting diode (OLED), based on Tb(o-MBA)3phen, the emission mainly comes from the direct recombination of electron and hole. Bright green emission can be obtained from the optimized multi-layer device (C) and the highest EL brightness reached 180 cd/m2 at the voltage of 17 V.",

keywords = "exciton, organic light-emitting diode (OLED), terbium complex",

author = "Xiufang Li and Zhenbo Deng and Yuanyuan Zhang and Yumeng Shi and Ruifen Wang",

year = "2008",

doi = "10.1007/s12200-008-0010-8",

language = "English (US)",

volume = "1",

pages = "130--133",

journal = "Frontiers of Optoelectronics in China",

issn = "1674-4128",

publisher = "Springer Verlag",

number = "1-2",

}

TY - JOUR

T1 - Emission mechanism in the terbium complex doped PVK system

AU - Li, Xiufang

AU - Deng, Zhenbo

AU - Zhang, Yuanyuan

AU - Shi, Yumeng

AU - Wang, Ruifen

PY - 2008

Y1 - 2008

N2 - A new kind of rare earth (RE) complex Tb(o-MBA)3phen was synthesized and used as an emitting material in electroluminescence. The material was doped into poly(N-vinylcarbazole) (PVK) as the emitting layer, which was made by spin coating. Three kinds of devices were fabricated with the structures: (A) ITO/PVK:Tb(o-MBA)3phen/LiF/Al; (B) ITO/PVK:Tb(o-MBA)3phen/BCP/AlQ3/LiF/Al; (C) ITO/BCP/PVK: Tb(o-MBA)3phen/AlQ3/LiF/Al. Bright green emission could be obtained from device (A) and (C). The photoluminescence (PL) and electroluminescence (EL) mechanisms of this material had been investigated. Since there was an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex, there should be a Förster energy transfer process between them. The excitation spectrum of PVK doped Tb(o-MBA)3phen system is similar with the excitation spectrum of PVK, yet it is different from that of Tb(o-MBA)3phen. So, the emission of Tb(o-MBA)3phen should partly come from the excitation of PVK while in the organic light-emitting diode (OLED), based on Tb(o-MBA)3phen, the emission mainly comes from the direct recombination of electron and hole. Bright green emission can be obtained from the optimized multi-layer device (C) and the highest EL brightness reached 180 cd/m2 at the voltage of 17 V.

AB - A new kind of rare earth (RE) complex Tb(o-MBA)3phen was synthesized and used as an emitting material in electroluminescence. The material was doped into poly(N-vinylcarbazole) (PVK) as the emitting layer, which was made by spin coating. Three kinds of devices were fabricated with the structures: (A) ITO/PVK:Tb(o-MBA)3phen/LiF/Al; (B) ITO/PVK:Tb(o-MBA)3phen/BCP/AlQ3/LiF/Al; (C) ITO/BCP/PVK: Tb(o-MBA)3phen/AlQ3/LiF/Al. Bright green emission could be obtained from device (A) and (C). The photoluminescence (PL) and electroluminescence (EL) mechanisms of this material had been investigated. Since there was an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex, there should be a Förster energy transfer process between them. The excitation spectrum of PVK doped Tb(o-MBA)3phen system is similar with the excitation spectrum of PVK, yet it is different from that of Tb(o-MBA)3phen. So, the emission of Tb(o-MBA)3phen should partly come from the excitation of PVK while in the organic light-emitting diode (OLED), based on Tb(o-MBA)3phen, the emission mainly comes from the direct recombination of electron and hole. Bright green emission can be obtained from the optimized multi-layer device (C) and the highest EL brightness reached 180 cd/m2 at the voltage of 17 V.

KW - exciton

KW - organic light-emitting diode (OLED)

KW - terbium complex

UR - http://www.scopus.com/inward/record.url?scp=84873488075&partnerID=8YFLogxK

U2 - 10.1007/s12200-008-0010-8

DO - 10.1007/s12200-008-0010-8

M3 - Article

AN - SCOPUS:84873488075

SN - 1674-4128

VL - 1

SP - 130

EP - 133

JO - Frontiers of Optoelectronics in China

JF - Frontiers of Optoelectronics in China

IS - 1-2

ER -

Emission mechanism in the terbium complex doped PVK system

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this