Elucidating the origin of resistive switching in ultrathin hafnium oxides through high spatial resolution tools

Physics

• Resistive Switching 100%
• Oxide 66%
• Hafnium 66%
• Metal 66%
• Semiconductor 33%
• Nanoscale 33%
• Insulators 33%
• Electrical Resistivity 33%
• Polycrystalline 33%
• Calculation 33%
• Information 33%
• Parameter 33%
• Standard 33%
• Memory 33%
• Grain Boundaries 33%

Chemistry

• Oxide 66%
• Metal 66%
• Semiconductor 33%
• Nonconductor 33%
• Reaction Yield 33%
• Electrical Resistance 33%
• Structure 33%
• Device 33%
• Concentration 33%
• Force 33%
• Resistivity 33%
• Grain Boundary 33%

Material Science

• Semiconductor Material 33%
• Cell 33%
• Grain Boundary 33%