TY - JOUR
T1 - Electrothermal Frequency Modulated Resonator for Mechanical Memory
AU - Hafiz, Md Abdullah Al
AU - Kosuru, Lakshmoji
AU - Younis, Mohammad I.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2016/8/18
Y1 - 2016/8/18
N2 - In this paper, we experimentally demonstrate a mechanical memory device based on the nonlinear dynamics of an electrostatically actuated microelectromechanical resonator utilizing an electrothermal frequency modulation scheme. The microstructure is deliberately fabricated as an in-plane shallow arch to achieve geometric quadratic nonlinearity. We exploit this inherent nonlinearity of the arch and drive it at resonance with minimal actuation voltage into the nonlinear regime, thereby creating softening behavior, hysteresis, and coexistence of states. The hysteretic frequency band is controlled by the electrothermal actuation voltage. Binary values are assigned to the two allowed dynamical states on the hysteretic response curve of the arch resonator with respect to the electrothermal actuation voltage. Set-and-reset operations of the memory states are performed by applying controlled dc pulses provided through the electrothermal actuation scheme, while the read-out operation is performed simultaneously by measuring the motional current through a capacitive detection technique. This novel memory device has the advantages of operating at low voltages and under room temperature. [2016-0043]
AB - In this paper, we experimentally demonstrate a mechanical memory device based on the nonlinear dynamics of an electrostatically actuated microelectromechanical resonator utilizing an electrothermal frequency modulation scheme. The microstructure is deliberately fabricated as an in-plane shallow arch to achieve geometric quadratic nonlinearity. We exploit this inherent nonlinearity of the arch and drive it at resonance with minimal actuation voltage into the nonlinear regime, thereby creating softening behavior, hysteresis, and coexistence of states. The hysteretic frequency band is controlled by the electrothermal actuation voltage. Binary values are assigned to the two allowed dynamical states on the hysteretic response curve of the arch resonator with respect to the electrothermal actuation voltage. Set-and-reset operations of the memory states are performed by applying controlled dc pulses provided through the electrothermal actuation scheme, while the read-out operation is performed simultaneously by measuring the motional current through a capacitive detection technique. This novel memory device has the advantages of operating at low voltages and under room temperature. [2016-0043]
UR - http://hdl.handle.net/10754/622541
UR - http://ieeexplore.ieee.org/document/7547384/
UR - http://www.scopus.com/inward/record.url?scp=84983032673&partnerID=8YFLogxK
U2 - 10.1109/JMEMS.2016.2598357
DO - 10.1109/JMEMS.2016.2598357
M3 - Article
SN - 1057-7157
VL - 25
SP - 877
EP - 883
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 5
ER -