Electrostatically Tunable Nanomechanical Shallow Arches

Syed Kazmi; Amal Hajjaj; Pedro M. F. J. Da Costa; Mohammad I. Younis

doi:10.1115/detc2017-67845

Electrostatically Tunable Nanomechanical Shallow Arches

Syed Kazmi, Amal Hajjaj, Pedro M. F. J. Da Costa, Mohammad I. Younis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

Original language	English (US)
Title of host publication	Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems
Publisher	ASME International
ISBN (Print)	9780791858165
DOIs	https://doi.org/10.1115/detc2017-67845
State	Published - Nov 3 2017

Bibliographical note

KAUST Repository Item: Exported on 2021-09-14
Acknowledgements: This work has been supported through King Abdullah University of Science and Technology (KAUST) research funds.

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10.1115/detc2017-67845

https://repository.kaust.edu.sa/bitstream/10754/626137/1/V004T09A011-DETC2017-67845.pdf

Cite this

@inproceedings{e2f3200825494b3794138f845f48c310,

title = "Electrostatically Tunable Nanomechanical Shallow Arches",

abstract = "We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.",

author = "Syed Kazmi and Amal Hajjaj and {Da Costa}, {Pedro M. F. J.} and Younis, {Mohammad I.}",

note = "KAUST Repository Item: Exported on 2021-09-14 Acknowledgements: This work has been supported through King Abdullah University of Science and Technology (KAUST) research funds.",

year = "2017",

month = nov,

day = "3",

doi = "10.1115/detc2017-67845",

language = "English (US)",

isbn = "9780791858165",

booktitle = "Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems",

publisher = "ASME International",

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TY - GEN

T1 - Electrostatically Tunable Nanomechanical Shallow Arches

AU - Kazmi, Syed

AU - Hajjaj, Amal

AU - Da Costa, Pedro M. F. J.

AU - Younis, Mohammad I.

N1 - KAUST Repository Item: Exported on 2021-09-14 Acknowledgements: This work has been supported through King Abdullah University of Science and Technology (KAUST) research funds.

PY - 2017/11/3

Y1 - 2017/11/3

N2 - We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

AB - We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

UR - http://hdl.handle.net/10754/626137

UR - http://proceedings.asmedigitalcollection.asme.org/proceeding.aspx?articleid=2662159

UR - http://www.scopus.com/inward/record.url?scp=85034782478&partnerID=8YFLogxK

U2 - 10.1115/detc2017-67845

DO - 10.1115/detc2017-67845

M3 - Conference contribution

AN - SCOPUS:85034782478

SN - 9780791858165

BT - Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems

PB - ASME International

ER -

Electrostatically Tunable Nanomechanical Shallow Arches

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