Electrostatically tunable nanomechanical shallow arches

Syed N.R. Kazmi; Amal Z. Hajjaj; Pedro M.F.J. Costa; Mohammad I. Younis

doi:10.1115/DETC2017-67845

Electrostatically tunable nanomechanical shallow arches

Syed N.R. Kazmi, Amal Z. Hajjaj, Pedro M.F.J. Costa, Mohammad I. Younis^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

Original language	English (US)
Title of host publication	22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems
Publisher	American Society of Mechanical Engineers (ASME)
ISBN (Electronic)	9780791858165
DOIs	https://doi.org/10.1115/DETC2017-67845
State	Published - 2017
Event	ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017 - Cleveland, United States Duration: Aug 6 2017 → Aug 9 2017

Publication series

Name	Proceedings of the ASME Design Engineering Technical Conference
Volume	4

Conference

Conference	ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017
Country/Territory	United States
City	Cleveland
Period	08/6/17 → 08/9/17

Bibliographical note

Publisher Copyright:
© Copyright 2017 ASME.

ASJC Scopus subject areas

Mechanical Engineering
Computer Graphics and Computer-Aided Design
Computer Science Applications
Modeling and Simulation

Access to Document

10.1115/DETC2017-67845

Cite this

Kazmi, S. N. R., Hajjaj, A. Z., Costa, P. M. F. J., & Younis, M. I. (2017). Electrostatically tunable nanomechanical shallow arches. In 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems (Proceedings of the ASME Design Engineering Technical Conference; Vol. 4). American Society of Mechanical Engineers (ASME). https://doi.org/10.1115/DETC2017-67845

@inproceedings{e2f3200825494b3794138f845f48c310,

title = "Electrostatically tunable nanomechanical shallow arches",

abstract = "We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.",

author = "Kazmi, {Syed N.R.} and Hajjaj, {Amal Z.} and Costa, {Pedro M.F.J.} and Younis, {Mohammad I.}",

note = "Publisher Copyright: {\textcopyright} Copyright 2017 ASME.; ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017 ; Conference date: 06-08-2017 Through 09-08-2017",

year = "2017",

doi = "10.1115/DETC2017-67845",

language = "English (US)",

series = "Proceedings of the ASME Design Engineering Technical Conference",

publisher = "American Society of Mechanical Engineers (ASME)",

booktitle = "22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems",

}

Kazmi, SNR, Hajjaj, AZ, Costa, PMFJ & Younis, MI 2017, Electrostatically tunable nanomechanical shallow arches. in 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems. Proceedings of the ASME Design Engineering Technical Conference, vol. 4, American Society of Mechanical Engineers (ASME), ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017, Cleveland, United States, 08/6/17. https://doi.org/10.1115/DETC2017-67845

Electrostatically tunable nanomechanical shallow arches. / Kazmi, Syed N.R.; Hajjaj, Amal Z.; Costa, Pedro M.F.J. et al.
22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems. American Society of Mechanical Engineers (ASME), 2017. (Proceedings of the ASME Design Engineering Technical Conference; Vol. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrostatically tunable nanomechanical shallow arches

AU - Kazmi, Syed N.R.

AU - Hajjaj, Amal Z.

AU - Costa, Pedro M.F.J.

AU - Younis, Mohammad I.

PY - 2017

Y1 - 2017

N2 - We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

AB - We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

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U2 - 10.1115/DETC2017-67845

DO - 10.1115/DETC2017-67845

M3 - Conference contribution

AN - SCOPUS:85034782478

T3 - Proceedings of the ASME Design Engineering Technical Conference

BT - 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems

PB - American Society of Mechanical Engineers (ASME)

T2 - ASME 2017 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC/CIE 2017

Y2 - 6 August 2017 through 9 August 2017

ER -

Kazmi SNR, Hajjaj AZ, Costa PMFJ, Younis MI. Electrostatically tunable nanomechanical shallow arches. In 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems. American Society of Mechanical Engineers (ASME). 2017. (Proceedings of the ASME Design Engineering Technical Conference). doi: 10.1115/DETC2017-67845

Electrostatically tunable nanomechanical shallow arches

Abstract

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Conference

Bibliographical note

ASJC Scopus subject areas

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