Electrostatic Modulation of LaAlO 3 /SrTiO 3 Interface Transport in an Electric Double-Layer Transistor

Wei-Nan Lin, Jun-Feng Ding, Shu-Xiang Wu, Yong-Feng Li, James Lourembam, Santiranjan Shannigrahi, Shi-Jie Wang, Tao Wu

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Electrostatic modulation on the two-dimensional transport of the LaAlO3/SrTiO3 interface in an electric double-layer transistor is demonstrated. The induced insulator-to-metal transition exhibits the nature of charge-density-driven percolation, and the Kondo effect governs the low-temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two-dimensional transport of oxide interfaces.
Original languageEnglish (US)
Pages (from-to)1300001
JournalAdvanced Materials Interfaces
Issue number1
StatePublished - Nov 13 2013

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