Neuromorphic computing systems, which use electronic synapses and neurons, could overcome the energy and throughput limitations of today’s computing architectures. However, electronic devices that can accurately emulate the short- and long-term plasticity learning rules of biological synapses remain limited. Here, we show that multilayer hexagonal boron nitride (h-BN) can be used as a resistive switching medium to fabricate high-performance electronic synapses. The devices can operate in a volatile or non-volatile regime, enabling the emulation of a range of synaptic-like behaviour, including both short- and long-term plasticity. The behaviour results from a resistive switching mechanism in the h-BN stack, based on the generation of boron vacancies that can be filled by metallic ions from the adjacent electrodes. The power consumption in standby and per transition can reach as low as 0.1 fW and 600 pW, respectively, and with switching times reaching less than 10 ns, demonstrating their potential for use in energy-efficient brain-like computing.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Aug 1 2018|