Electronic Properties of Graphene–PtSe2 Contacts

Shahid Sattar, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.
Original languageEnglish (US)
Pages (from-to)15809-15813
Number of pages5
JournalACS Applied Materials & Interfaces
Issue number18
StatePublished - Apr 26 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). Fruitful discussions with M. Sajjad and N. Singh are gratefully acknowledged. This publication was made possible by a National Priorities Research Program grant (NPRP 7-665-1-125) from the Qatar National Research Fund (a member of The Qatar Foundation). The statements made herein are solely the responsibility of the authors.


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