Separating photogenerated charge carriers by carrier-selective heterostructure contacts rather than by doped homojunctions is a promising pathway to approach the theoretical power conversion efficiency (PCE) limit of crystalline silicon (c-Si) solar cells. An electron-selective, hole-blocking lithium contact for c-Si solar cells is presented by simple thermal evaporation of air-stable Li3N powder. It is found that this lithium contact introduces only a minimal Schottky-barrier height for electron transport at its interface with lightly doped n-type c-Si surfaces, resulting in a low contact resistivity of 12.8 mΩ cm2. By implementing a full-area electron-selective lithium contact, an n-type c-Si solar cell with a PCE of 19% is achieved, representing a 4% absolute PCE improvement over reference devices with an aluminum contact. The choices of electron-selective contact materials for photovoltaic devices, using simple, scalable fabrication methods are extended.
|Original language||English (US)|
|Journal||Advanced Materials Interfaces|
|State||Published - May 24 2021|
Bibliographical noteKAUST Repository Item: Exported on 2021-05-26
Acknowledged KAUST grant number(s): OSR-CRGURF/1/3383
Acknowledgements: J.K., X.Y., and W.L. contributed equally to this work. Xinyu Zhang is thanked for Raman spectroscopy characterizations and Mohamed Nejib Hedhili for XPS measurement. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRGURF/1/3383.
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering