Electron field emission enhancement effects of nano-diamond films

S. G. Wang*, Qing Zhang, S. F. Yoon, J. Ahn, Q. Zhou, Q. Wang, D. J. Yang, J. Q. Li, Sam Zhang Shanyong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

65 Scopus citations


In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/ N2 or CH4 /Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.

Original languageEnglish (US)
Pages (from-to)143-147
Number of pages5
JournalSurface and Coatings Technology
Issue number2-3
StatePublished - Apr 22 2003
Externally publishedYes


  • Electron emitter
  • Electron field emission
  • Nano-diamond film

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


Dive into the research topics of 'Electron field emission enhancement effects of nano-diamond films'. Together they form a unique fingerprint.

Cite this